Optimization Design for SiC Drift Step Recovery Diode (DSRD)

Yan, Xiaoxue; Liang, Lin; Wang, Ziyue; Tan, Guoqiang

doi:10.23919/epe20ecceeurope43536.2020.9215669

Cited by 5 publications

(2 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In order to verify the above inference, a pulse test circuit based on DSRD is specially established in simulation, as shown in Figure 3 . The detailed operating principle of the circuit can be referred to [ 26 ].…”

Section: Methods and Resultsmentioning

confidence: 99%

4H-SiC Drift Step Recovery Diode with Super Junction for Hard Recovery

et al. 2021

Self Cite

View full text Add to dashboard Cite

Silicon carbide (SiC) drift step recovery diode (DSRD) is a kind of opening-type pulsed power device with wide bandgap material. The super junction (SJ) structure is introduced in the SiC DSRD for the first time in this paper, in order to increase the hardness of the recovery process, and improve the blocking capability at the same time. The device model of the SJ SiC DSRD is established and its breakdown principle is verified. The effects of various structure parameters including the concentration, the thickness, and the width of the SJ layer on the electrical characteristics of the SJ SiC DSRD are discussed. The characteristics of the SJ SiC DSRD and the conventional SiC DSRD are compared. The results show that the breakdown voltage of the SJ SiC DSRD is 28% higher than that of the conventional SiC DSRD, and the dv/dt output by the circuit based on SJ SiC DSRD is 31% higher than that of conventional SiC DSRD. It is verified that the SJ SiC DSRD can achieve higher voltage, higher cut-off current and harder recovery characteristics than the conventional SiC DSRD, so as to output a higher dv/dt voltage on the load.

show abstract

Section: Methods and Resultsmentioning

confidence: 99%

4H-SiC Drift Step Recovery Diode with Super Junction for Hard Recovery

et al. 2021

Self Cite

View full text Add to dashboard Cite

show abstract

“…However, these components present challenges such as unavailability on the commercial market, bulky designs and relatively long precharging phases in the hundreds of nanoseconds range-resulting in a pulse triggering delay of up to more than 500 ns [16]. Both types are categorized as opening switches, operating on the principle of rapidly recovering the blocking capability after the removal of the pre-charged plasma from the component structure (equivalent to reverse recovery in diodes) [17]. This involves the generation and maintenance of plasma prior to its application for triggering functions, a process that demands considerable effort.…”

Section: Introductionmentioning

confidence: 99%

Updates on Impact Ionisation Triggering of Thyristors

del Barrio Montañés,

Senaj,

Kramer

et al. 2024

Applied Sciences

View full text Add to dashboard Cite

High voltage (HV) generators are used in multiple industrial and scientific facilities. Recent publications have demonstrated that triggering industrial thyristors (relatively slow switching devices) in overvoltage mode, also called impact ionization mode, significantly enhances their dU/dt and dI/dt characteristics. This novel triggering methodology necessitates the application of substantial overvoltage between the thyristor’s anode and cathode, delivered with a swift slew rate exceeding 1 kV/ns. The adoption of compact pulse generators constructed from commercially available off-the-shelf components (COTS) opens up avenues for deploying this technology across various domains, including the implementation of high-speed kicker generators in particle accelerators. In our methodology, we employed commercially available high-voltage SiC MOSFETs along with a custom-designed fast gate driver. This driver was conceptualized based on the recent development of gate boosting techniques, featuring a driving voltage exceeding 600 V. The gate driver for these MOSFETs comprises three key components: a level-shifter with NMOS and PMOS transistors, a compact Marx generator with two avalanche transistors, and a GaN HEMT in a high input and low output impedance configuration. The proposed gate-boosting driver achieves a slew rate exceeding 1 kV/ns for the driving pulse. Furthermore, we demonstrate that with this driver, a 1.7 kV rated SiC MOSFET can produce an output pulse of 1.45 kV and a maximum slew rate of ≈2.5 kV/ns. This gate-boosting driver aims to minimize commutation times, achieves a slew rate of over 1 kV/ns, and handle higher loads, making it ideal for impact ionization triggering of industrial thyristors.

show abstract

High-Voltage Nanosecond Pulse Generator Based on DSRD Series Components

Liu,

Yu,

et al. 2023

2023 8th International Conference on Power and Renewable Energy (ICPRE)

View full text Add to dashboard Cite

Optimization Design for SiC Drift Step Recovery Diode (DSRD)

Cited by 5 publications

References 15 publications

4H-SiC Drift Step Recovery Diode with Super Junction for Hard Recovery

4H-SiC Drift Step Recovery Diode with Super Junction for Hard Recovery

Updates on Impact Ionisation Triggering of Thyristors

High-Voltage Nanosecond Pulse Generator Based on DSRD Series Components

Contact Info

Product

Resources

About