Optimization Issue in Interconnect Analysis

Recovering doping profiles in semiconductor devices with the Boltzmann–Poisson model

“…The aim of parameter extraction is to recover material parameters of devices from measurement of device characteristics, such as the voltage-to-current (I-V) data and the voltage-to-capacitance (C-V) data. The parameters that are of interests are mainly the doping profile [19,24,34,47] and the carrier mobilities [10,51,56], but there are also significant interests in other material parameters such as thermal and electrical conductivities [30,31].…”