Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method

Roslan, Ameer F.; Kaharudin, K.E.; Salehuddin, F.; Zain, Anis Suhaila Mohd; Ahmad, Ibrahim; Faizah, Z. A. Noor; Haroon, Hazura; Hanim, A. R.; Idris, Siti Khadijah; Zaiton, A. M.; Mohamad, Najmiah Radiah; Hamid, Aidil Abdul

doi:10.1088/1742-6596/1123/1/012046

Cited by 4 publications

(1 citation statement)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition, the numerical simulation could be combined with numerous statistical and machine learning approaches in identifying the optimal solution for better output performances [13,14,15]. The main advantage of these approaches is to provide predictive insight on the device performances before undergoing actual experimental and fabrication process which definitely saving a lot of time and cost [16,17,18].…”

Section: Introductionmentioning

confidence: 99%

Predictive Modeling of Mixed Halide Perovskite Cell Using Hybrid L27 Oa Taguchi-Based Ga-MLR-Ga Approach

Kaharudin

Salehuddin

2021

Jurnal Teknologi

View full text Add to dashboard Cite

Perovskite photovoltaic cell is regarded as an alternative configuration for the conventional photovoltaic cells predominantly due to its high efficiency. In this paper, a predictive modeling using a hybrid L27 orthogonal array (OA) Taguchi-based Grey relational analysis (GRA), multiple linear regression (MLR) and genetic algorithm (GA) was proposed to optimize the device parameters for better overall performance. The Perovskite photovoltaic cell model is initially constructed and simulated using solar cell capacitance simulator (SCAPS). The final results reveal that the proposed hybrid L27 OA Taguchi-based GRA-MLR-GA approach has effectively optimized the device parameters in which SnO2:F thickness, SnO2:F donor density, ZnO thickness, ZnO donor density, CH3NH3PbI3-xClx thickness, CH3NH3PbI3-xClx donor density, Spiro-OMeTAD thickness and Spiro-OMeTAD acceptor density are predictively tuned at 0.198 μm, 8.973 x 1018 cm-3, 0.039 μm, 8.827 x 1017 cm-3, 0.386 μm, 1.929 x 1013 cm-3, 0.233 μm and 8.984 x 1018 cm-3 respectively. After the predictive modeling, both FF and PCE of the perovskite photovoltaic cell have been improved for ~5.93% and ~5.78% respectively.

show abstract

Section: Introductionmentioning

confidence: 99%

Predictive Modeling of Mixed Halide Perovskite Cell Using Hybrid L27 Oa Taguchi-Based Ga-MLR-Ga Approach

Kaharudin

Salehuddin

2021

Jurnal Teknologi

View full text Add to dashboard Cite

show abstract

Virtual fabrication in modelling 14 nm horizontal double gate bilayer graphene FET NMOS/PMOS

Nur Hazwani Naili,

Afifah Maheran,

Salehuddin

et al. 2024

AIP Conference Proceedings

View full text Add to dashboard Cite

Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET

Kaharudin

Salehuddin

Zain

et al. 2020

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

Application of strained channel in Metal-oxide-semiconductor Field Effect Transistors (MOSFET) technology influences the electrical properties due to the significant changes in the energy band structure of silicon lattices. Thus, in this paper, a comprehensive analysis is conducted to investigate the impact of strained channel towards several electrical properties of junctionless double-gate MOSFET. The comparative analysis is carried out by simulating two different sets of device structure which are JLDGM device (without strain) and junctionless double-gate strained MOSFET (JLDGSM) device. The results show that the strained channel has improved the on-state current (ION), on-off ratio, transconductance (gm) and transconductance generation factor (TGF) by approximately 58 %, 98%, 98%, and 44% respectively. The significant improvement is mainly attributed to the presence of biaxial strain boosting the electron mobility in the channel. The intrinsic gate delay (τint) has significantly reduced by approximately 52% as the strained channel is applied. Since the variation of intrinsic gate capacitances (Cint) is very minimal (4%) as the strained channel is applied, the gate delay is dominantly governed by the drain current. However, the application of strain channel has increased the dynamic power dissipation (Pdyn) for approximately 19% mainly due to slightly increased intrinsic gate capacitances.

show abstract

Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method

Cited by 4 publications

References 12 publications

Predictive Modeling of Mixed Halide Perovskite Cell Using Hybrid L27 Oa Taguchi-Based Ga-MLR-Ga Approach

Predictive Modeling of Mixed Halide Perovskite Cell Using Hybrid L27 Oa Taguchi-Based Ga-MLR-Ga Approach

Virtual fabrication in modelling 14 nm horizontal double gate bilayer graphene FET NMOS/PMOS

Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET

Contact Info

Product

Resources

About