Optimization of a-Si/c-Si heterojunction solar cells by BF₂ ion implantation

Abstract

This work demonstrates the amorphous Si (a-Si) /crystalline Si (c-Si) heterojunction solar cells by using ion implantation. First, we use B and BF 2 ion implantation with 7 0-tilt angle to form emitter layer. Furthermore, we compare 7 0-tilt angle and 60 0-tilt angle BF 2 ion implantation to form emitter layers. From the results, the fluorine of BF 2 can passivate a-Si emitter layer, and high 60 0-tilt angle ion implantation can form shallower junction of solar cell. The emitter layer formed by BF 2 60 0-tilt angle ion implantation a-Si/c-Si heterojunction solar cell achieves the highest Jsc of 36.85 mA/cm 2 and the conversion efficiency of 14.41%.