Cooling‐rate effects play an important role in polymer processing because the materials experience rapid cooling when transferring from melt states to solid states. The traditional Tait equation has been used widely in representing the volumetric behaviors of polymers as a function of temperature and pressure, but not of cooling rate. Based on the dependence of glass‐transition temperature on cooling rate (i.e., θ = dTg/d log ∣ q ∣), the volumetric dependence on cooling rate is employed in this work to modify the traditional Tait P–V–T equation to become a time‐dependent P–V–T model. The physical meanings of the traditional Tait equation parameters are interpreted and, thereby, parameters in the new model are derived according to the material constant θ. The controlled cooling‐rate measurements of polymeric volumetric data have been performed in this work to verify the validity of the proposed model. Additionally, the material parameter θ, calculated from the measured data of polystyrene (PS) (Chi‐Mei PG‐33) in this work, equals 2.85 K, which is close to 2.86 K calculated from the Greiner‐Schwarzl work. Furthermore, a comparison of the predicted results with the experimental data both in this work and from literature is discussed under different pressures and various cooling rates. The results have indicated that the proposed non‐equilibrium P–V–T model closely correlates with experimental data.

In this work, the fabrication of WO3∕W nanocrystals for nonvolatile memory devices has been achieved via rapid thermal oxidation of tungsten silicide. Amorphous Si and WSix (x=2.7) layers were deposited onto the tunneling oxide and sequentially oxidized to form well-shaped WO3∕W nanocrystals. The mean size of WO3∕W nanocrystals is ∼8.4nm, while density is ∼1.57×1011cm−2. Moreover, the nonvolatile memory device for WO3∕W nanocrystals exhibits ∼0.53V threshold voltage shift under 1V∕(−5V) operation. The sample without capping a-Si layer was also fabricated for comparison. By material analyses, reasonable formation mechanisms are proposed in this letter.

A supercritical CO2 (SCCO2) fluid technique is proposed to improve electrical characteristics for W nanocrystal nonvolatile memory devices, since the thickness and quality of tunnel oxide are critical issues for the fabrication of nonvolatile memory devices. After SCCO2 treatments, C-V curves are restored to normal, as well as the leakage current of W nanocrystal memory devices are reduced significantly. It reveals that W nanocrystal memory devices could be formed with shorter oxidation time, moreover, dangling bonds and trapping states initially created within an incomplete oxidized film will be efficiently repaired after SCCO2 treatment.

This work demonstrates the amorphous Si (a-Si) /crystalline Si (c-Si) heterojunction solar cells by using ion implantation. First, we use B and BF 2 ion implantation with 7 0-tilt angle to form emitter layer. Furthermore, we compare 7 0-tilt angle and 60 0-tilt angle BF 2 ion implantation to form emitter layers. From the results, the fluorine of BF 2 can passivate a-Si emitter layer, and high 60 0-tilt angle ion implantation can form shallower junction of solar cell. The emitter layer formed by BF 2 60 0-tilt angle ion implantation a-Si/c-Si heterojunction solar cell achieves the highest Jsc of 36.85 mA/cm 2 and the conversion efficiency of 14.41%.