Optimization of a Tin/TiSi<sub>2</sub> p+ Diffusion Barrier Process

Lee, S.S.; Galovich, C. S.; Fuchs, Kevin; Kwong, D. L.; Hirvonen, J.; Huang, J.

doi:10.1557/proc-146-217

Cited by 4 publications

(2 citation statements)

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“…The other relevant HTC product requirement is the use of an RTP TiN barrier metal process, (Ref. [3][4][5][6][7][8][9][10], that provides a low contact resistance titanium nitride/silicide film. The TiN barrier metal is also used in many IC fabrication processes to prevent aluminum spiking and silicon nodule growth in contact regions.…”

Section: • Backgroundmentioning

confidence: 99%

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<title>Wirebond pull test failures at rapid thermal processes (RTP) TiN/BPSG interface</title>

O'Meara¹

1994

SPIE Proceedings

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Ultrasonic wirebond pull test failures were identified on 7 of 30 development lots receiving a rapid thermal processed (RTP) titanium nitride (TiN) barrier metal (as part of the metal film stack) over a 16 month period. In some cases, the pull test failures occurred at forces less than the minimum requirement of 2.5 grams. The failures were intermittent in wafer location and resulted in exposed borophosphosilicate glass (BPSG) under the metal pads . No trends were found with product type , proces s dates or sequence, or processing equipment, (BPSG, metal deposition or RTP ) . The faulty films did not fail tape peel adhesion tests , and thus could not be identified by that technique.The problem was found to be related to an interaction between the titanium and BPSG during the RTP nitridation process. Our experiments, analytical studies and literary surveys suggest that a dopant in BPSG either embrittles the TiN (or interfacial glass) through consumptive segregation or enhances the BPSG flow properties during RTP, creating a weakly adhering interfacial region after the ultrasonic action of the wirebond process. Further experiments refute the reflowing BPSG theory and somewhat substantiate the dopant segregation/embrittling phase theory. • BACKGROUNDThe multimetal level, radiation hardened processes used at the Hughes Technology Center (HTC) require the low thermal budget and good planarization properties of a specific TMCTS BPSG process flowed at 8 50C, (Ref. 1,2). BPSG is commonly used in integrated circuit (IC) fabrication at dopant concentrations around 4% boron and 4% phosphorus because of the good, relatively low temperature glass flow characteristics and stability from precipitate formations found in higher dopant concentrations. The other relevant HTC product requirement is the use of an RTP TiN barrier metal process, , that provides a low contact resistance titanium nitride/silicide film. The TiN barrier metal is also used in many IC fabrication processes to prevent aluminum spiking and silicon nodule growth in contact regions.After the success of several experimental lots using BPSG and O-8194-1668-1/94/$6.OO SPIE Vol. 2335 / 115 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/16/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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Section: • Backgroundmentioning

confidence: 99%

“…[3][4][5][6][7][8][9][10]. A Varian 3180 deposited the initial titanium thickness of 450A with no heat added to the process.…”

Section: Standard Film Processesmentioning

confidence: 99%

<title>Wirebond pull test failures at rapid thermal processes (RTP) TiN/BPSG interface</title>

O'Meara¹

1994

SPIE Proceedings

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Formation of β-SiC at the interface between an epitaxial Si layer grown by rapid thermal chemical vapor deposition and a Si substrate

Kim

Maillot

Morgan

et al. 1990

Journal of Applied Physics

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The formation of β-SiC during rapid thermal chemical vapor deposition of an epitaxial Si layer on a (100) Si substrate has been demonstrated using high-resolution cross-sectional transmission electron microscopy and secondary ion mass spectrometry (SIMS) depth profiling. Ellipsoidal β-SiC precipitates (3×10 nm2 average size) were found with a density of (6±1)×109 cm−2 along the epilayer/substrate interface. SIMS revealed about 0.2 monolayer of carbon concentrated at the interface. The precipitates were shown to form during the hydrogen prebake as a result of improper surface cleaning. The crystalline quality of the epitaxial layer, however, was unaffected by the presence of the β-SiC.

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Rapid Thermal Processing

Timans¹

2007

Handbook of Semiconductor Manufacturing Technology, Second Edition

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Optimization of a Tin/TiSi₂ p+ Diffusion Barrier Process

Cited by 4 publications

References 7 publications

<title>Wirebond pull test failures at rapid thermal processes (RTP) TiN/BPSG interface</title>

<title>Wirebond pull test failures at rapid thermal processes (RTP) TiN/BPSG interface</title>

Formation of β-SiC at the interface between an epitaxial Si layer grown by rapid thermal chemical vapor deposition and a Si substrate

Rapid Thermal Processing

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Optimization of a Tin/TiSi2 p+ Diffusion Barrier Process

Cited by 4 publications

References 7 publications

<title>Wirebond pull test failures at rapid thermal processes (RTP) TiN/BPSG interface</title>

<title>Wirebond pull test failures at rapid thermal processes (RTP) TiN/BPSG interface</title>

Formation of β-SiC at the interface between an epitaxial Si layer grown by rapid thermal chemical vapor deposition and a Si substrate

Rapid Thermal Processing

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Product

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Optimization of a Tin/TiSi₂ p+ Diffusion Barrier Process