Handbook of Semiconductor Manufacturing Technology, Second Edition 2007
DOI: 10.1201/9781420017663.ch11
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Rapid Thermal Processing

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Cited by 4 publications
(5 citation statements)
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“…Wet chemical 71 , dry reactive ion 72 , and plasma-assisted etching 73 techniques are used to clean and remove material from selected regions of the substrate. Thermal treatments 7476 at high temperature are often used to add impurities (dopants) into the substrate as well as grow insulating oxide layers on the surface. These techniques are more than sufficient to fabricate hybrid devices required for microfluidic flow cytometers.…”
Section: Fabrication Of Microfluidic Flow Cytometry Devicesmentioning
confidence: 99%
“…Wet chemical 71 , dry reactive ion 72 , and plasma-assisted etching 73 techniques are used to clean and remove material from selected regions of the substrate. Thermal treatments 7476 at high temperature are often used to add impurities (dopants) into the substrate as well as grow insulating oxide layers on the surface. These techniques are more than sufficient to fabricate hybrid devices required for microfluidic flow cytometers.…”
Section: Fabrication Of Microfluidic Flow Cytometry Devicesmentioning
confidence: 99%
“…Dynamic non-uniformity effects become dominant when very high power heat sources are employed. For example, the recent renaissance in millisecond annealing, where τ is < ~10 ms, has required the use of high-power pulses of energy for selective surface heating that is followed by rapid conductive cooling to the bulk of the wafer [54][55][56][57][58][59][60][61][62][63][64]. Fig.…”
Section: Rapid Thermal Processing and Beyond: Applications In Semicon...mentioning
confidence: 99%
“…This is because of heat transfer along the scanning direction, which causes the peak temperature rise at any given location to be affected by the "history" of the scan across the wafer, including the presence of patterns. The localized nature of the heating also means that adequate process uniformity requires a large overlap between adjacent scans of the laser beam, leading to a fundamental trade-off between uniformity and wafer throughput [54,58]. Pattern effects have also been observed for lamp-based millisecond annealing [61][62][63], even though the wider spectrum of radiation from a flash-lamp does lead to spectral averaging of optical properties.…”
Section: Rapid Thermal Processing and Beyond: Applications In Semicon...mentioning
confidence: 99%
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“…Such a progress is driven by advances in the engineering of ultra-thin gate insulators, highmobility channels, ultra-shallow junctions and low-resistance contacts. RTP (Rapid Thermal Processing) is a key process step in providing the essential capabilities for both process and material development on this front [1]. Figure 1 illustrates the important role of RTP in an advanced fabrication process.…”
Section: Introductionmentioning
confidence: 99%