Optimization of a TiSi2 formation based on PECVD Ti using DoE methodology

Hößler, Diana; Ernst, Matthias

doi:10.1016/j.sse.2019.05.003

Cited by 9 publications

(2 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Recently, the calibration of GTN parameters in order to accurately predict the damage mechanisms has seen increased attention. In order to have a successful calibration and to reduce the number of trials, the design of experiment (DOE) methods and, in particular, the Taguchi method has been effectively applied to mechanical studies [30][31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

Damage characterization of heat-treated titanium bio-alloy (Ti–6Al–4V) based on micromechanical modeling

Rastgordani¹,

Darabi²,

Kadkhodapour³

et al. 2020

Surf. Topogr.: Metrol. Prop.

View full text Add to dashboard Cite

In this study, a micromechanical finite element model is proposed based on experimental data and the rule of the mixture (RoM) in order to predict the tensile behavior of mechanical properties of heat-treated dual-phase medical-grade titanium (Ti–6Al–4V). Tensile tests, micro-hardness measurements, and RoM were used to obtain flow curves for the α and β phases. Scanning electron microscopy (SEM) imaging was used to determine phase fractions and to create representative volume elements (RVEs). Furthermore, the Gurson-Tvergaard-Needleman (GTN) damage model was calibrated using the Taguchi design of experiment (DOE) method in order to predict damage in the microstructure and the results were compared to fracture surface obtained using fractography in order to investigate failure mechanisms. The final micromechanical model could accurately predict stress-strain curves and showed that void formation and coalescence is the primary mechanism of failure. Finally, analyses of the surfaces showed that a fully ductile fracture occurs at the failure point, which agrees with the results of the damage model. The results suggest that the proposed model can predict the failure of heat-treated Ti–6Al–4V bio-alloys.

show abstract

Section: Introductionmentioning

confidence: 99%

Damage characterization of heat-treated titanium bio-alloy (Ti–6Al–4V) based on micromechanical modeling

Rastgordani¹,

Darabi²,

Kadkhodapour³

et al. 2020

Surf. Topogr.: Metrol. Prop.

View full text Add to dashboard Cite

show abstract

“…TiN deposition too has the drawback that sufficient bottom coverage cannot be obtained by using the existing sputtering method [28,29]. Only the metal organic CVD (MOCVD) process shows very good bottom-coverage characteristics [30,31]. After confirming the basic physical properties by verification, we examined the applicability of IMP Ti, CVD TiN, and CVD W to logic devices based on via resistance, and we established the optimal process conditions.…”

Section: Introductionmentioning

confidence: 99%

Process Optimization of Via Plug Multilevel Interconnections in CMOS Logic Devices

et al. 2019

View full text Add to dashboard Cite

This paper reports on the optimization of the device and wiring in a via structure applied to multilevel metallization (MLM) used in CMOS logic devices. A MLM via can be applied to the Tungsten (W) plug process of the logic device by following the most optimized barrier deposition scheme of RF etching 200 Å IMP Ti (ion metal plasma titanium) 200 Å CVD TiN (titanium nitride deposited by chemical vapor deposition) 2 × 50 Å. The resistivities of the glue layer and barrier, i.e., IMP Ti and CVD TiN, were 73 and 280 μΩ·cm, respectively, and the bottom coverages were 57% and 80%, respectively, at a 3.2:1 aspect ratio (A/R). The specific resistance of the tungsten film was approximately 11.5 μΩ·cm, and it was confirmed that the via filling could be performed smoothly. RF etching and IMP Ti should be at least 200 Å each, and CVD TiN can be performed satisfactorily with the existing 2 × 50 Å process. Tungsten deposition showed no difference in the via resistance with deposition temperature and SiH4 reduction time. When the barrier scheme of RF etching 200 Å IMP Ti 200 ÅCVD TiN 2 × 50 Å was applied, the via resistance was less than 20 Ω, even with a side misalignment of 0.05 μm and line-end misalignment of ~0.1 μm.

show abstract

Preparation of C54-TiSi2 by the Electromagnetic Directional Solidification of Hypoeutectic Ti-53.98 Wt Pct Si Alloy Melt

Yan

Zhu

Zhou

et al. 2022

Metall Mater Trans B

View full text Add to dashboard Cite

Optimization of a TiSi2 formation based on PECVD Ti using DoE methodology

Cited by 9 publications

References 10 publications

Damage characterization of heat-treated titanium bio-alloy (Ti–6Al–4V) based on micromechanical modeling

Damage characterization of heat-treated titanium bio-alloy (Ti–6Al–4V) based on micromechanical modeling

Process Optimization of Via Plug Multilevel Interconnections in CMOS Logic Devices

Preparation of C54-TiSi2 by the Electromagnetic Directional Solidification of Hypoeutectic Ti-53.98 Wt Pct Si Alloy Melt

Contact Info

Product

Resources

About