This paper reports on the optimization of the device and wiring in a via structure applied to multilevel metallization (MLM) used in CMOS logic devices. A MLM via can be applied to the Tungsten (W) plug process of the logic device by following the most optimized barrier deposition scheme of RF etching 200 Å IMP Ti (ion metal plasma titanium) 200 Å CVD TiN (titanium nitride deposited by chemical vapor deposition) 2 × 50 Å. The resistivities of the glue layer and barrier, i.e., IMP Ti and CVD TiN, were 73 and 280 μΩ·cm, respectively, and the bottom coverages were 57% and 80%, respectively, at a 3.2:1 aspect ratio (A/R). The specific resistance of the tungsten film was approximately 11.5 μΩ·cm, and it was confirmed that the via filling could be performed smoothly. RF etching and IMP Ti should be at least 200 Å each, and CVD TiN can be performed satisfactorily with the existing 2 × 50 Å process. Tungsten deposition showed no difference in the via resistance with deposition temperature and SiH4 reduction time. When the barrier scheme of RF etching 200 Å IMP Ti 200 ÅCVD TiN 2 × 50 Å was applied, the via resistance was less than 20 Ω, even with a side misalignment of 0.05 μm and line-end misalignment of ~0.1 μm.

Here, we developed the optimal conditions in terms of physical and electrical characteristics of the barrier and tungsten (W) deposition process of a contact module, which is the segment connecting the device and the multi-layer metallization (MLM) metal line in the development of 100 nm-class logic devices. To confirm its applicability to the logic contact of barrier and W films, a contact hole was formed, first to check the bottom coverage and the filling status of each film, then to check the electrical resistance and leakage characteristics to analyze the optimal conditions. At an aspect ratio of 3.89:1, ionized metal plasma (IMP) Ti had a bottom coverage of 40.9% and chemical vapor deposition (CVD) titanium nitride (TiN) of 76.2%, confirming that it was possible to apply the process to 100 nm logic contacts. W filling was confirmed, and a salicide etching rate (using Radio Frequency (RF) etch) of 13–18 Å/s at a 3.53:1 aspect ratio was applied. The etching rate on the thermal oxide plate was 9 Å/s. As the RF etch amount increased from 50–100 Å, the P active resistance increased by 0.5–1 Ω. The resistance also increased as the amount of IMP Ti deposition increased to 300 Å. A measurement of the borderless contact junction leakage current indicated that the current in the P + N well increased by more than an order of magnitude when IMP Ti 250 Å or more was deposited. The contact resistance value was 0.5 Ω. An AC bias improved the IMP Ti deposition rate by 10% in bottom coverage, but there was no significant difference in contact resistance. In the case of applying IMP TiN, the overall contact resistance decreased to 2 Ω compared to CVD TiN, but the distribution characteristics were poor. The best results were obtained under the conditions of RF etch 50 Å, IMP Ti 200 Å, and CVD TiN 2 × 50 Å.