Optimization of Al-CVD process based on elementary reaction simulation and experimental verification: From the growth rate to the surface morphology

Sugiyama, Masakazu; Iino, Takahiro; Nakajima, Tohru; Tanaka, Takeshi; Egashira, Yasuyuki; Yamashita, Kohichi; Komiyama, Hiroshi; Shimogaki, Yukihiro

doi:10.1016/j.tsf.2005.07.058

Cited by 7 publications

(7 citation statements)

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“…3, it can be seen that the amount of carbon contaminant in films, originating from incomplete oxidation and local formation of TMA is reduced with increase in deposition temperature. Compared to reported carbon content for ALD-grown Al 2 O 3 films using Al(mmp) 3 or TMA chemistry at deposition temperature of 300 C, much lower values are obtained for DMAH-induced AlO x N y films in our case, 25,27 and a similar phenomenon has been observed by Sugiyama et al [28][29][30][31] Based on their observations, the lower carbon content for DMAH-derived samples can be attributed to the existence of the following disproportionation reactions: Therefore, on the surface, DMAH decomposes to TMA [Al(CH 3 ) 3 ] and -CH 3 and -H. These components will react with each other to form TMA and CH 4 . Thus, CH 3 radicals on the surface will be removed as gaseous product Al(CH 3 ) 3 (TMA) and CH 4 , which leads to lower carbon content of the films.…”

Section: Film Growth and Characterizationsupporting

confidence: 75%

Metal-organic chemical vapor deposition of aluminium oxynitride from propylamine–dimethylaluminium hydride and oxygen: growth mode dependence and performance optimization

Sun

Shi

et al. 2012

J. Mater. Chem.

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Section: Film Growth and Characterizationsupporting

confidence: 75%

Metal-organic chemical vapor deposition of aluminium oxynitride from propylamine–dimethylaluminium hydride and oxygen: growth mode dependence and performance optimization

Sun

Shi

et al. 2012

J. Mater. Chem.

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“…We hope that the text has been improved pressure vapour phase deposition, e.g. sputtering [4,5] and CVD [6,7], or by high temperature processing, e.g. thermal spraying [8,9] and hot dipping [10,11].…”

Section: Regarding the Deposition Section (Second Half Of Page 13): Tmentioning

confidence: 99%

Aluminium electrodeposition from a novel hydrophobic ionic liquid tetramethyl guanidinium-perfluoro-3-oxa-4,5 dichloro-pentan-sulphonate

Oriani

Cojocaru

Monzani

et al. 2017

Journal of Electroanalytical Chemistry

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Manuscript Region of Origin: SPAIN Reviewers' comments:Reviewer #1: This manuscript reports interesting results about the electrodeposition of aluminium using tetramethyl guanidium -perfluoro -3 -oxa-4,5 dichloro-pentansulphonate, a novel hydrophobic ionic liquid, which is synthesized and supplied by Solvay Specialty Polymers. The effect of temperature, aluminium and bistrifluoromethanesulfonimide lithium salt concentration, in the conductivity and electrochemical behavior of the electrolyte is evaluated and clearly discussed. However, the manuscript needs some improvements before acceptance for publication. My detailed comments are as follows:At first the authors want to acknowledge the reviewer for the fruitful comment and then we tried to answer the questions The objective of this paragraph was encourage the use of the electrodeposition for the preparation of deposits. At no time it was intended to give the impression that aluminum electrodeposition from IL was used for the first time. The paragraph has been rewritten and the suggested references included and consequently reordered. 2.Introduction section (Page 3), the phrase "Aluminium has a low reduction potential", is contrary to that reported in literature. In fact, because of the rather negative standard potential of Al, electrodeposition of Al from aqueous solutions is not possible due to hydrogen evolution at the cathode (Ref. 12 in the manuscript).The words "low reduction" was used as synonym of "very negative" potential. In the new version in order to avoid misunderstandings between potential and overpotential, the phase contains "very negative standard potential". 3.Page 10, just before the last paragraph, the authors comment that the voltammograms of Fig. 4B show the onset of reduction current at higher potentials if the aluminium content is increased. I suggest changing "higher potentials" for "more positive potentials" to avoid confusions.According to the suggestion and in order to clarify the text, in this paragraph and others the "higher/lower" comparative were substituted by "more positive/more negative" in order to avoid confusions. 4.Page 11, in the discussion of the voltammetric curves obtained in the absence and presence of LiTFSI (Fig. 7), the authors comment that LiTFSI favours the aluminium deposition process, only based in the appearance of the reduction onset at Response to Reviews Aluminium electrodeposition from a novel hydrophobic ionic liquid tetramethyl guanidium -perfluoro-3-oxa-4,5 dichloro-pentan-sulphonate

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“…Moreover, aluminum CVD films with DMAH have been examined for integrated circuits because of its low carbon impurity content, the possibility of forming aluminum films with excellent gap-filling properties, and high deposition rate. [25][26][27] The higher deposition rate using DMAH is achieved by reducing the steric effect by different ligands, which increases the number of available reaction sites. 28) However, there are have been a few studies on using DMAH in the ALD-Al 2 O 3 films.…”

Section: Introductionmentioning

confidence: 99%

Effects of carbon impurity in ALD-Al₂O₃ film on HAXPES spectrum and electrical properties of Al₂O₃/AlGaN/GaN MIS structure

Shibata¹,

Uenuma²,

Yamada³

et al. 2022

Jpn. J. Appl. Phys.

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In this study, the effects of carbon impurity in the atomic layer deposited-Al2O3 film on the hard X-ray photoelectron spectroscopy (HAXPES) spectra and the electrical properties of metal–insulator–semiconductor (MIS) structure were measured. The carbon concentration in the Al2O3 film was adjusted by varying the deposition conditions (precursor: trimethylaluminum, Al(CH3)3, or dimethylaluminum hydride, Al(CH3)2H, oxidant, and deposition temperature) in the atomic layer deposition (ALD) process. The HAXPES measurements revealed the correlation between full width at half maximum (FWHM) of Al 1s and O 1s spectra and the carbon concentration in the Al2O3 film. Furthermore, the negative charges in the Al2O3 film could change the FWHM, attributed to the carbon impurity. The correlation between the carbon concentration and the electrical characteristics of the Al2O3/AlGaN/GaN MIS structure was analyzed. The interface state density and the effective charge density were dependent on the carbon concentration in the Al2O3 film.

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Optimization of Al-CVD process based on elementary reaction simulation and experimental verification: From the growth rate to the surface morphology

Cited by 7 publications

References 10 publications

Metal-organic chemical vapor deposition of aluminium oxynitride from propylamine–dimethylaluminium hydride and oxygen: growth mode dependence and performance optimization

Metal-organic chemical vapor deposition of aluminium oxynitride from propylamine–dimethylaluminium hydride and oxygen: growth mode dependence and performance optimization

Aluminium electrodeposition from a novel hydrophobic ionic liquid tetramethyl guanidinium-perfluoro-3-oxa-4,5 dichloro-pentan-sulphonate

Effects of carbon impurity in ALD-Al₂O₃ film on HAXPES spectrum and electrical properties of Al₂O₃/AlGaN/GaN MIS structure

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Optimization of Al-CVD process based on elementary reaction simulation and experimental verification: From the growth rate to the surface morphology

Cited by 7 publications

References 10 publications

Metal-organic chemical vapor deposition of aluminium oxynitride from propylamine–dimethylaluminium hydride and oxygen: growth mode dependence and performance optimization

Metal-organic chemical vapor deposition of aluminium oxynitride from propylamine–dimethylaluminium hydride and oxygen: growth mode dependence and performance optimization

Aluminium electrodeposition from a novel hydrophobic ionic liquid tetramethyl guanidinium-perfluoro-3-oxa-4,5 dichloro-pentan-sulphonate

Effects of carbon impurity in ALD-Al2O3 film on HAXPES spectrum and electrical properties of Al2O3/AlGaN/GaN MIS structure

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Effects of carbon impurity in ALD-Al₂O₃ film on HAXPES spectrum and electrical properties of Al₂O₃/AlGaN/GaN MIS structure