Volume 1: 32nd Design Automation Conference, Parts a and B 2006
DOI: 10.1115/detc2006-99748
|View full text |Cite
|
Sign up to set email alerts
|

Optimization of Chemical Vapor Deposition Process

Abstract: Chemical Vapor Deposition (CVD) process is simulated and optimized for the deposition of a thin film of silicon from silane. The key focus is on the rate of deposition and on the quality of the thin film produced. The intended application dictates the level of quality need for the film. Proper control of the governing transport processes results in large area film thickness and composition uniformity. A vertical impinging CVD reactor is considered. The goal is to optimize the CVD system. The effect of importan… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

2
11
0

Year Published

2010
2010
2017
2017

Publication Types

Select...
5
1

Relationship

3
3

Authors

Journals

citations
Cited by 6 publications
(13 citation statements)
references
References 0 publications
2
11
0
Order By: Relevance
“…A detailed comparison between experimental and numerical results has been made and fairly good agreements has been found (Chiu, 1999). The numerical results using the settings described in the previous discussion is almost identical to George's simulation results (George, 2007) with the mass diffusivity in the FLUENT database, which is given by a polynomial equation of the temperature as follows: …”
Section: Validationsupporting
confidence: 66%
See 4 more Smart Citations
“…A detailed comparison between experimental and numerical results has been made and fairly good agreements has been found (Chiu, 1999). The numerical results using the settings described in the previous discussion is almost identical to George's simulation results (George, 2007) with the mass diffusivity in the FLUENT database, which is given by a polynomial equation of the temperature as follows: …”
Section: Validationsupporting
confidence: 66%
“…To validate the correctness of the numerical simulations with the developed settings in FLUENT, the deposition rate of the silicon in a horizontal CVD reactor is compared with experimental and numerical results from other researchers (Eversteyn et al, 1970;Mahajan and Wei, 1991;Yoo and Jaluria, 2002;George, 2007). The Fig.…”
Section: Validationmentioning
confidence: 99%
See 3 more Smart Citations