Optimization of convex electrode geometry for surface discharge used for fabrication of the electrode groove on solar cells

Hamada, Toshiyuki; Arakawa, Shunichi; Sakoda, Tatsuya; Otsubo, Masahisa; Matsui, Kazuo; Nagasawa, K.

doi:10.1016/j.surfcoat.2008.06.167

Cited by 5 publications

(2 citation statements)

References 3 publications

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“…Incidentally, SIM observations showed that the SiN film was completely etched in the central area of the electrode groove, while remaining in the bottom portions of the texture near the edge. This can be explained by the fact that in monocrystalline silicon substrates for solar cells, a SiN film is vapor‐deposited by LP‐CVD on a pyramid texture, and therefore, the film is likely to be thicker in the bottom parts of the texture 9. In addition, a surface discharge develops along a lateral face of the dielectric; therefore, the radicals required for etching decrease in number with distance from the plasma area, and etching slows down toward the edges.…”

Section: Discussionmentioning

confidence: 99%

Fabrication of electrode groove on silicon solar cell by high‐pressure surface discharge

Hamada

Arakawa

Otsubo

et al. 2011

Elect Comm in Japan

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SUMMARYWe propose a low-cost plasma process technique to fabricate narrower front electrode grooves on a single crystalline silicon solar cell, in which a surface discharge operated at high pressure etches a silicon nitride film 150 nm thick on a silicon layer. Tests showed that the surface discharge could effectively etch the silicon nitride film in a short time; a high etching rate exceeding 3000 nm/min was obtained. Narrow and uniform grooves with a width of less than 70 µm were obtained when the pressure in the chamber, the back electrode length, and the etching time were 152 kPa, 2 mm, and 10 s, respectively. Narrower electrode grooves could be obtained when the back electrode length was short and the pressure was high. © 2011 Wiley Periodicals, Inc. Electron Comm Jpn, 94(4): 28-35, 2011; Published online in Wiley Online Library (wileyonlinelibrary.com).

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Section: Discussionmentioning

confidence: 99%

Fabrication of electrode groove on silicon solar cell by high‐pressure surface discharge

Hamada

Arakawa

Otsubo

et al. 2011

Elect Comm in Japan

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“…Additionally, the front contact groove is useful for making selective emitter structure fabricated by doping phosphorus with high density [1]. We have proposed an etching technique of antireflection films using surface discharges operated at atmospheric pressure [2][3][4]. Front contact grooves were fabricated by the surface discharges generated locally on dielectric materials, which made maskless etching possible.…”

Section: Introductionmentioning

confidence: 99%

Plasma Grooving System Using Atmospheric Pressure Surface Discharge Plasma

Hamada

Sakoda

Otsubo

2009

Plasma Chem Plasma Process

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To fabricate narrow front contact grooves on a single crystalline silicon solar cell, we carried out etching of a silicon nitride film on a silicon substrate using the surface discharge plasma operated at atmospheric pressure. The control of groove width by changing the discharge voltage (V d ) and the length of a back electrode (l) used for formation of the surface discharge was examined. It was found that narrower electrode grooves could be obtained when l was short. For the case of l = 2 mm, the narrowest groove of 116 lm was obtained at V d = 3.5 kV and the processing time (t e ) of 10 s.

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Fabrication of Electrode Groove on Silicon Solar Cell using High-Pressure Surface Discharge

et al. 2008

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Optimization of convex electrode geometry for surface discharge used for fabrication of the electrode groove on solar cells

Cited by 5 publications

References 3 publications

Fabrication of electrode groove on silicon solar cell by high‐pressure surface discharge

Fabrication of electrode groove on silicon solar cell by high‐pressure surface discharge

Plasma Grooving System Using Atmospheric Pressure Surface Discharge Plasma

Fabrication of Electrode Groove on Silicon Solar Cell using High-Pressure Surface Discharge

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