Optimization of crystal growth by changes of flow guide, radiation shield and sidewall insulation in Cz Si furnace

Su, Wenjia; Zuo, Ran; Mazaev, K.; Kalaev, V.V.

doi:10.1016/j.jcrysgro.2009.11.055

Cited by 43 publications

(22 citation statements)

References 17 publications

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“…The maximum von Mises stress in the case-A, case-B, case-C, case-D and case-E corresponding to 3.25E7 Pa, 3.01E7 Pa, 2.98E7 Pa, 2.96E7 Pa and 3.01E7 Pa. The critical thermal stress for silicon is 2.5 E7 Pa. [22] In case-A (conventional) 7 % of the ingot volume is above critical stress value and in the modified cases 2.5 % of the ingot volume is above critical value. The maximum region of the conventional and modified grown ingots are in the range below the critical value.…”

Section: Von Mises Stressmentioning

confidence: 88%

Numerical Investigation of Cone Shape Grooved DS Block to Improve the mc–Si Ingot Quality

Aravindan¹,

Manikam²,

Perumalsamy³

2021

Crystal Research and Technology

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Multicrystalline silicon solar cells occupy 62% in crystalline silicon solar cell production. It is grown by the directional solidification process. Solidification control has a vital role in directional solidification process. Cone shape groove is made in the directional solidification block to enhance the outgoing heat flux in the center region than the peripheral region. Five directional solidification furnaces are simulated for making a multicrystalline silicon ingot. First furnace is the conventional furnace, the second furnace has 30 mm × 85 mm groove block, the third furnace has 40 mm × 85 mm groove block, the fourth furnace has 50 mm × 85 mm groove block and the fifth furnace has 60 mm × 85 mm groove block. The von Mises stress in the maximum volume of the conventional and modified grown ingots are below the range of critical value. In conventional case 7% of the ingot volume is above critical stress value and in the modified cases 2.5% of the ingot volume is above critical stress value. If axial and radial temperature gradient is combined in the 50 mm × 85 mm groove block leads to better results.

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Section: Von Mises Stressmentioning

confidence: 88%

Numerical Investigation of Cone Shape Grooved DS Block to Improve the mc–Si Ingot Quality

Aravindan¹,

Manikam²,

Perumalsamy³

2021

Crystal Research and Technology

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“…In order to reduce costs, improvements in the hot zone's design (lower argon and power consumption, increase pulling rate) and the crucible (lower cost and longer lifetime) are needed. A 35% increase in the pulling rate was proposed through the optimization of the argon flow guide, the geometries of the radiation shield, and the side/bottom insulations [65]. By optimizing the original argon flow path, the heater and graphite susceptor lifetimes can be significantly lengthened.…”

Section: Cz Growth Optimizationmentioning

confidence: 99%

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

Seigneur

Mohajeri

Brooker

et al. 2016

Renewable and Sustainable Energy Reviews

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This article is the first in a three-part series of manufacturing metrology for c-Si photovoltaic (PV) module reliability and durability. Here in Part 1 we focus on the three primary process steps for making silicon substrates for PV cells: (1) feedstock production; (2) ingot and brick production; and (3) wafer production. Each of these steps can affect the final reliability/durability of PV modules in the field with manufacturing metrology potentially playing a significant role. This article provides a comprehensive overview of historical and current processes in each of these three steps, followed by a discussion of associated reliability challenges and metrology strategies that can be employed for increased reliability and durability in resultant modules. Gaps in the current state of understanding in connective metrology data during processing to reliability/durability in the field are then identified along with suggested improvements that should be considered by the PV community.

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“…C pq число узлов сетки, принадлежащих процессору p, которые необходимы процессору q для выполнения итерации. Зависимость хральского [391,392,393,394,395]).…”

Section: параллельные вычисленияunclassified

Simulation of Single Crystal Growth: Heat and Mass Transfer

Zhmakin¹

2015

Preprint

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Представлен обзор современного состояния моделирования роста объемных монокристаллов полупроводников и диэлектриков из расплава и газовой фазы в рамках моделей механики сплощной среды. Рассмотрены механизмы теплообмена теплопроводностью, конвекцией, излучением, показана необходимость корректного описания оптических свойств кристаллов (полупрозрачность, наличие диффузно и зеркально отражающих поверхностей), обсуждены вопросы характеризации качества монокристаллов, проблемы верификации моделей, особенности программного обеспечения, предназначенного для фундаментальных и прикладных исследований.

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Optimization of crystal growth by changes of flow guide, radiation shield and sidewall insulation in Cz Si furnace

Cited by 43 publications

References 17 publications

Numerical Investigation of Cone Shape Grooved DS Block to Improve the mc–Si Ingot Quality

Numerical Investigation of Cone Shape Grooved DS Block to Improve the mc–Si Ingot Quality

Manufacturing metrology for c-Si photovoltaic module reliability and durability, Part I: Feedstock, crystallization and wafering

Simulation of Single Crystal Growth: Heat and Mass Transfer

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