2004
DOI: 10.1088/0953-2048/17/5/062
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Optimization of electron cooling by SIN tunnel junctions

Abstract: We report on the optimization of electron cooling by SIN tunnel junctions due to the advanced geometry of superconducting electrodes and very effective normal metal traps for more efficient removal of quasiparticles at temperatures from 25 to 500 mK. The maximum decrease in electron temperature of about 200 mK has been observed at bath temperatures 300-350 mK. We used four-junction geometry with Al-AlO x-Cr/Cu tunnel junctions and Au traps. Efficient electron cooling was realized due to the improved geometry o… Show more

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Cited by 24 publications
(19 citation statements)
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“…Experimental cooling from 300 down to 100 mK in a SINIS structure was demonstrated in Ref. 2 and bolometric response up to 2 THz in Ref. 3.…”
mentioning
confidence: 98%
“…Experimental cooling from 300 down to 100 mK in a SINIS structure was demonstrated in Ref. 2 and bolometric response up to 2 THz in Ref. 3.…”
mentioning
confidence: 98%
“…The second method can give a misleading result due to ambiguity of the zero-bias point. For example in [10] a zero bias peak was observed. In this paper we use the power, found from the heat balance equations, to calculate responsivity S V and NEP.…”
mentioning
confidence: 99%
“…As previously shown theoretically, a strong bolometric effect and effective electron cooling are possible in bolometric structures with the superconductor-insulator-normal metal (SIN) junctions [1]. The electron cooling from 300 to 100 mK was experimentally obtained [2]. The limiting characteristics of the proposed devices can be estimated using the relation P = Σν ( -) for the energy transfer from electrons to phonons or the relation T e = ( + P / Σν ) 1/5 for the electron temperature, where Σ is the constant of the material, ν is the absorber volume, and T o is the phonon temperature.…”
mentioning
confidence: 77%