1999
DOI: 10.1063/1.124469
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Optimization of erbium-doped light-emitting diodes by p-type counterdoping

Abstract: In this letter, we report on the influence of the space charge region width in erbium- and oxygen-doped silicon light-emitting diodes on the electroluminescence (EL) power at 1.54 μm under reverse bias conditions. The space charge region width was varied by codoping the Si:Er:O layer with boron, thereby compensating the Er–O donors. We observe a strong enhancement of the EL power with increasing width. The data indicate the existence of a dark region of approximately 45 nm in the pn junction, in which no light… Show more

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Cited by 13 publications
(7 citation statements)
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“…This may enable us to enlarge the optically active volume for impact excitation far beyond the width of the space charge region of a diode. 7 Reducing the doping density of the Er:O donors by boron counterdoping in the unipolar structure could increase the space charge region correlated to each suboxide layer. This may open up new ways to optimize the EL output of Er-doped Si structures.…”
Section: Discussionmentioning
confidence: 99%
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“…This may enable us to enlarge the optically active volume for impact excitation far beyond the width of the space charge region of a diode. 7 Reducing the doping density of the Er:O donors by boron counterdoping in the unipolar structure could increase the space charge region correlated to each suboxide layer. This may open up new ways to optimize the EL output of Er-doped Si structures.…”
Section: Discussionmentioning
confidence: 99%
“…The EL temperature dependence of the conventional reverse biased Si-pn diode is plotted for reference: The EL intensity at 1.54 m decreases by a factor of 8 between 10 and 300 K. This is ascribed to the thermal deactivation of the excited erbium by backtransfer processes and to a decrease of the applied voltage originating from a trap-assisted tunnel breakdown. 7 In contrast, the pn diode with a suboxide injector shows a slight increase of the EL intensity up to 130 K. At higher temperatures the EL quenches, but this structure yields a very small quenching factor of about 3 between 10 and 300 K. Again the voltage across the structure shows an analogous dependence on the temperature: For temperatures up to 130 K the voltage at constant current rises, which indicates a dominant avalanche breakdown. Due to the additional suboxide barrier, significant band-band tunneling may take place only for tunneling paths within the n or the p region of the diode not involving the suboxide layer.…”
Section: El Temperature Dependencementioning
confidence: 94%
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“…5,10 For electron impact excitation of erbium ions of series B no EL output at 1.54 m is observed up to a space-charge region width of 45 nm. 5 A similar behavior is observed for holes, but holes need a larger distance ͑about 70 nm͒ to collect enough energy after the tunneling process. We attribute the larger dark region to the higher scattering rate of holes compared to electrons.…”
Section: Excitation Efficiency Of Electrons and Holes In Forward And mentioning
confidence: 97%
“…This radiation is generated by an intra 4 f transition of the erbium ion which is excitable within the silicon host. [1][2][3][4][5] Additional codopants allow to incorporate erbium ions up to concentrations of 10 20 cm Ϫ3 without significant segregation and enhance the number of the optical active erbium centers. 1,2 The erbium ion in the silicon host can be excited in two ways: On the one hand, erbium in combination with a codopant introduces an impurity level in the silicon band gap.…”
Section: Excitation Efficiency Of Electrons and Holes In Forward And mentioning
confidence: 99%