Optimization of Finite-Zone Implanted Edge Termination for β-Ga₂O₃ SBD

Abstract

We report improvement of the breakdown voltage of Ga2O3 SBD with finite implanted edge termination through simulation. The influence of implanted acceptor concentration, implanted depth, and implanted length on the breakdown voltage of SBD is investigated. The breakdown voltage can be increased to 2500 V when the implanted concentration is 5 × 1017 cm-3 and implanted depth is 0.5 μm, more than 5 times than that of regular Ga2O3 SBD. However, the breakdown voltage reduces to below 1000 V when the implanted concentration is higher than 1 × 1018 cm-3. An extra trench isolation structure combined with finite implanted edge termination can improve this phenomenon. The breakdown voltage at high implanted concentration can be stabilized above 1500 V.

Investigation of Ga2O3/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation

“…results of Ref. [25] Acceptor concentration (cm -3 ) Activation energy (eV) 10 15 10 16 10 17 10 18 10 19 10 20 10 21…”

“…simulation have not been completely included in the TCAD software. [13] Although the simulations for several devices using diamond or Ga 2 O 3 have been reported, such as Schottky diodes (SBDs) and field effect transistors (FETs), [14][15][16][17][18] as far as we know, no such research on Ga 2 O 3 /diamond detectors has emerged yet. In this work, the Fermi-Dirac distribution is applied to count the carrier distribution in each region of the device, and the drift-diffusion model combined with the Poisson equation and the current continuity equation is used to calculate the current characteristics and electric field distribution of the devices.…”