Optimization of furnace design and growth parameters for Si Cz growth, using numerical simulation

Optimization of crystal growth by changes of flow guide, radiation shield and sidewall insulation in Cz Si furnace

“…Using computer simulation instead, one can reproduce crystal growth process and forecast the physical phenomena quickly and economically, including thermal field, melt turbulence, gas convection, thermal stresses, etc., at varying operation and geometry conditions [2][3][4][5][6][7].…”

“…More importantly, the oxygen content in the grown crystals was greatly reduced leading to longer minority lifetime. Smirnova and Durnev [6] developed a new structure of monosilicon furnace, the growth rate was increased by 15-30%.…”

Effects of cusp-shaped magnetic field on melt convection and oxygen transport in an industrial CZ-Si crystal growth

“…Accordingly, the deformation of the growth interface is much reduced, relative to the case of no magnetic field. The shear flow in this layer leads to a W-shaped growth interface geometry, which is known as a source of dislocation generation [26]. The CMF suppresses the buoyancy convection near the crucible wall, a region of high magnetic field intensity.…”

Effect of crystal and crucible rotations on the interface shape of Czochralski grown silicon single crystals

“…3, for some combinations of crystal and crucible rotation rates the interface shape switches from convex to a W-shape, and the location of the maximum deflection becomes off centre. Profoundly developed W-shaped interfaces are known to act as a dislocation generating source and hence affect the crystal quality [16]. They can also considerably affect the location and intensity of the maximum stress point at the interface.…”