Optimization of high optical gain in type-II In0.70Ga0.30As/GaAs0.40Sb0.60 lasing nano-heterostructure for SWIR applications

Nirmal, H. K.; Yadav, Nisha; Rahman, F.; Alvi, P. A.

doi:10.1016/j.spmi.2015.09.006

Cited by 31 publications

(6 citation statements)

References 11 publications

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“…The optical gain produced in any quantum well heterostructure within transverse electric (TE) and transverse magnetic (TM) modes can be calculated by using Fermi's golden rule and is given by ;

G true(ℏ ω true) = \frac{π e^{2}}{n c ϵ ω L m^{2}} \sum_{η = ↑, ↓} \sum_{σ = U, L} \sum_{n, m} \int {| true(\overset{e}{true} \cdot M_{n m}^{η σ} (k_{normalt}) true) |}^{2} \times \frac{true(f_{n}^{c} (k_{normalt}) - f_{σ m}^{normalv} true(k_{t} true) true) true(\frac{γ}{π} true)}{{(E_{η, σ n m}^{c, v} true(k_{t} true) - ω ℏ)}^{2} + {normalγ}^{2}} \frac{k_{normalt} {d k}_{normalt}}{2 π},

where ê is polarization vector associated with the electric field responsible for optical effects, e represents magnitude of elementary charge, m is mass of electron, n is refractive index of QW region, L is well width,

γ = ℏ / τ_{int}

represents the half linewidth of the Lorentzian function and

f_{n}^{normalc}

and

f_{σ m}^{normalv}

are the quasi Fermi levels and can be given as

f_{n}^{normalc} (k_{normalt}) = \frac{1}{1 + \exp (E_{n}^{normalc} (k_{normalt}) - F_{}}

…”

Section: Information About the Structure And Theoretical Backgroundmentioning

confidence: 99%

“…Further, strain compensated type‐II InGaAs/GaAsSb M‐shaped quantum well heterostructures have been designed by Chen et al for the detection of MWIR wavelength and their transition wavelengths have also been calculated by applying four band k · p theory ; and have been shown to absorb wavelengths of 2–4 µm. Nirmal et al have optimized very high optical gain within SWIR wavelength region from M‐shaped type‐II In 0.70 Ga 0.30 As/GaAs 0.40 Sb 0.60 symmetric nano‐heterostructure for injected carrier's concentration of 5 × 10 12 cm −2 by solving the 6 × 6 diagonalized k · p Hamiltonian. In addition, they have also studied the optical gain tunability under the application of high pressure for the same heterostructure .…”

Section: Introductionmentioning

confidence: 99%

“…The optical gain produced in any quantum well heterostructure within transverse electric (TE) and transverse magnetic (TM) modes can be calculated by using Fermi's golden rule and is given by [5,6,22,23];…”

mentioning

confidence: 99%

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Transformation of type‐II InAs/AlSb nanoscale heterostructure into type‐I structure and improving interband optical gain

Alvi¹

2017

Physica Status Solidi (b)

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Most of the detailed studies have been directed toward III–V semiconductors based type‐I and type‐II heterostructures. But, the transformations between type‐I and type‐II heterostructures have not been well studied so far. In this paper, it is reported that the proper doping in a specific region of well known type‐II InAs/AlSb nanoscale heterostructure can transforms it into the type‐I heterostructure. Moreover, this doping also improves the interband optical gain of the transformed type‐I heterostructure as compared to the original type‐II structure. The eight band k · p model based self‐consistent calculations have been performed to calculate the band structure and the carrier's wavefunctions. On the basis of outcomes from the calculations, it is reported that the optimized interband optical gain (within TM mode) of the transformed heterostructure is almost ten times as compared to the other heterostructures operating in mid‐infrared (MIR) region. Thus, the transformed heterostructure may be an important heterostructure made of InAs/AlSb material system for MIR wavelength region. Hence, the proper doping can transform type‐II heterostructure made of an optically inactive material system into type‐I structure, a very efficient optically active heterostructure (referred to as gain structure), which can provide technologically important MIR wavelength range.

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“…The optical gain produced in any quantum well heterostructure within transverse electric (TE) and transverse magnetic (TM) modes can be calculated by using Fermi's golden rule and is given by ;

G true(ℏ ω true) = \frac{π e^{2}}{n c ϵ ω L m^{2}} \sum_{η = ↑, ↓} \sum_{σ = U, L} \sum_{n, m} \int {| true(\overset{e}{true} \cdot M_{n m}^{η σ} (k_{normalt}) true) |}^{2} \times \frac{true(f_{n}^{c} (k_{normalt}) - f_{σ m}^{normalv} true(k_{t} true) true) true(\frac{γ}{π} true)}{{(E_{η, σ n m}^{c, v} true(k_{t} true) - ω ℏ)}^{2} + {normalγ}^{2}} \frac{k_{normalt} {d k}_{normalt}}{2 π},

γ = ℏ / τ_{int}

represents the half linewidth of the Lorentzian function and

f_{n}^{normalc}

and

f_{σ m}^{normalv}

are the quasi Fermi levels and can be given as

f_{n}^{normalc} (k_{normalt}) = \frac{1}{1 + \exp (E_{n}^{normalc} (k_{normalt}) - F_{}}

…”

Section: Information About the Structure And Theoretical Backgroundmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Transformation of type‐II InAs/AlSb nanoscale heterostructure into type‐I structure and improving interband optical gain

Alvi¹

2017

Physica Status Solidi (b)

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“…Both of them have their distinguished features in different regime of wavelengths. Most of the type-I and type-II heterostructures has shown their utility in the visible region and near infrared region (NIR) [1][2][3][4][5][6]; some have been found to play their role in MIR (mid infrared region) or SWIR (shortwave infrared region) as well as in FIR (far infrared region) [7]- [11]. Recently, nitride based type-II heterostructures have also been reported for UV (ultra violet) applications.…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments

et al. 2018

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In this paper, we have configured InGaAsP QW (quantum well) heterostructures of type-I and type-II band alignments and simulated their optical characteristics by solving 6 x 6 Kohn-Luttinger Hamiltonian Matrix. According to the simulation results, the InGaAsP QW heterostructure of type-I band alignment has been found to show peak optical gain (TE mode) of the order of~3600/cm at the transition wavelength~1.40 µm; while of type-II band alignment has achieved the peak gain (TE mode) of the order of~7800/cm at the wavelength of~1.85 µm (eye safe region). Thus, both of the heterostructures can be utilized in designing of opto-or photonic devices for the emission of radiations in NIR (near infrared region) but form the high gain point of view, the InGaAsP of type-II band alignment can be more preferred.

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“…[1][2][3] However, type-II heterostructures have found their utilizations in photovoltaic applications like solar cells and photodetectors. [4][5][6][7][8] In case of type-I quantum well (QW) heterostructures, electrons and holes are restricted in the identical spatial regions and so there exist a QW for electrons and a QW for holes. However, in case of type-II QW heterostructures, the alignment of interfaces occurs in a manner that either the valence band edge or the conduction band edge exists inside the other.However, there had been a significant advancement in the growth of III-nitride group built heterostructures since their possible applications in manufacturing the several electronic and the optical devices like laser diodes, LEDs, field effect transistors (FETs), tandem solar cells, and Schottky junctions.…”

mentioning

confidence: 99%

Tunable Optical Gain Characteristics of AlN/GaN/InAlN Quantum Well Heterostructure under Uniaxial and Biaxial Pressures

Ezzeldien

Dolia

Alzaid

et al. 2022

Physica Status Solidi (b)

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In the last couple of decades, an extensive study of type-I heterostructures has been carried out and the researchers have found their applications in optoelectronic devices like light emitting diodes (LEDs), lasers, and in communication systems based on the optical fiber technology. [1][2][3] However, type-II heterostructures have found their utilizations in photovoltaic applications like solar cells and photodetectors. [4][5][6][7][8] In case of type-I quantum well (QW) heterostructures, electrons and holes are restricted in the identical spatial regions and so there exist a QW for electrons and a QW for holes. However, in case of type-II QW heterostructures, the alignment of interfaces occurs in a manner that either the valence band edge or the conduction band edge exists inside the other.However, there had been a significant advancement in the growth of III-nitride group built heterostructures since their possible applications in manufacturing the several electronic and the optical devices like laser diodes, LEDs, field effect transistors (FETs), tandem solar cells, and Schottky junctions. [9][10][11][12][13][14][15][16][17][18] III-nitride semiconductor substances include AlN, InN, GaN, and their derivatives that possess great wide bandgaps which are preferable for current optoelectronic and electronic applications. [19][20][21][22] The special abilities of III-nitrides comprise excessive dielectric breakdown voltage, significant thermal and chemical stability, extreme breakdown voltage, great saturated drift rate, wide bandgap that ranges from infrared to deep ultraviolet, etc. III-nitride semiconductors generally devise together with Wurtzite crystal arrangement that is because of the absence of inversion symmetry, and hence responsible for piezoelectric behavior in them. They emerge as the earliest semiconductor system where extended defects

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Optimization of high optical gain in type-II In0.70Ga0.30As/GaAs0.40Sb0.60 lasing nano-heterostructure for SWIR applications

Cited by 31 publications

References 11 publications

Transformation of type‐II InAs/AlSb nanoscale heterostructure into type‐I structure and improving interband optical gain

Transformation of type‐II InAs/AlSb nanoscale heterostructure into type‐I structure and improving interband optical gain

A Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments

Tunable Optical Gain Characteristics of AlN/GaN/InAlN Quantum Well Heterostructure under Uniaxial and Biaxial Pressures

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