Optimization of High-Voltage Wide Bandgap Semiconductor Power Diodes

Shenai, K.; Chattopadhyay, Abhiroop

doi:10.1109/ted.2014.2371775

Cited by 20 publications

(4 citation statements)

References 20 publications

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“…Gallium nitride (GaN) is one of the superior materials for high frequency and high-power devices for future needs [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 ]. GaN material comes from the III-V group materials which possess the piezoelectric property and spontaneous property in nature, GaN devices such as HEMTs, Metal Insulator Semiconductor HEMTs (MIS-HEMTs) and also Schottky Barrier Diodes (SBDs) are profitable from the presence of large channel charge density (~1 × 10 13 cm −2 ) at the interface of AlGaN and undoped GaN (Two-Dimensional Electron Gas (2DEG)) region with unintentional doping in the device structure [ 9 , 10 , 11 , 12 , 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

et al. 2021

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This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activation energies in the device structure will impact the performance of a device, the source of traps and position of traps in the device remains as a complex exercise until today. The key parameters for the precise tuning of threshold voltage (Vth) in GaN transistors are the control of the positive fixed charges −5 × 1012 cm−2, donor-like traps −3 × 1013 cm−2 at the nitride/GaN interfaces, the energy of the donor-like traps 1.42 eV below the conduction band and the acceptor traps activation energy in the AlGaN layer and buffer regions with 0.59 eV below the conduction band. Hence in this paper, the sensitivity of the trap mechanisms in GaN/AlGaN/GaN HEMT transistors, understanding the absolute vertical electric field distribution, electron density and the physical characteristics of the device has been investigated and the results are in good agreement with GaN experimental data.

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Section: Introductionmentioning

confidence: 99%

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

et al. 2021

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“…Emerging wide bandgap (WBG) semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), exhibit superior material properties than traditional Si materials, enabling power devices to operate effectively under harsh operating conditions [24]- [26]. WGB materials offer outstanding physical properties like a wider energy gap, better thermal conductivity, higher electron mobility, higher saturated velocity, and larger critical electric field [27]- [30]. Physical properties of different semiconductor materials are described in Fig 1.…”

Section: Introductionmentioning

confidence: 99%

Experimental evaluation of medium-voltage cascode gallium nitride (GaN) devices for bidirectional DC-DC converters

Alharbi

Matin

2021

Trans. Electr. Mach. Syst.

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Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), exhibit superior physical properties and demonstrate great potential for replacing conventional silicon (Si) semiconductors with WBG technology, pushing the boundaries of power devices to handle higher blocking voltages, switching frequencies, output power levels, and operating temperatures. However, tradeoffs in switching performance and converter efficiency when substituting GaN devices for Si and SiC counterparts are not well-defined, especially in a cascode configuration. Additional research with further detailed investigation and analysis is necessitated for medium-voltage GaN devices in power converter applications. Therefore, the aim of this research is to experimentally investigate the impact of emerging 650/900 V cascode GaN devices on bidirectional dc-dc converters that are suitable for energy storage and distributed renewable energy systems. Dynamic characteristics of Si, SiC, and cascode GaN power devices are examined through the double-pulse test (DPT) circuit at different gate resistance values, device currents, and DC bus voltages. Furthermore, the switching behavior and energy loss as well as the rate of voltage and current changes over the time are studied and analyzed at various operating conditions. A 500 W experimental converter prototype is implemented to validate the benefits of cascode GaN devices on the converter operation and performance. Comprehensive analysis of the power losses and efficiency improvements for Si-based, SiC-based, and GaN-based converters are performed and evaluated as the switching frequency, working temperature, and output power level are in-creased. The experimental results reveal significant improvements in switching performance and energy efficiency from the emerging cascode GaN devices in the bidirectional converters.

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“…Growing GaN naturally on a silicon substrate results in a normally on or a D-mode device inherently characterized by stress-induced two-dimensional electron gas (2DEG) formation [3]. Because of their strong intrinsic or spontaneous charge polarization, conventional wide bandgap GaN-based heterojunction devices can deliver excellent performance in ultra-high frequency power amplifiers and high-voltage power devices [4][5][6][7][8][9][10][11][12]. Normally on devices can be designed and used in such applications, but these require a threshold voltage (V th ) to turn off and are dangerous because once the power is switched off, the device turns on automatically.…”

Section: Introductionmentioning

confidence: 99%

A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation

et al. 2021

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This study presents an innovative, low-cost, mass-manufacturable ion implantation technique for converting thin film normally on AlGaN/GaN devices into normally off ones. Through TCAD (Technology Computer-Aided Design) simulations, we converted a calibrated normally on transistor into a normally off AlGaN/GaN transistor grown on a silicon <111> substrate using a nitrogen ion implantation energy of 300 keV, which shifted the bandgap from below to above the Fermi level. In addition, the threshold voltage (Vth) was adjusted by altering the nitrogen ion implantation dose. The normally off AlGaN/GaN device exhibited a breakdown voltage of 127.4 V at room temperature because of impact ionization, which showed a positive temperature coefficient of 3 × 10−3 K−1. In this study, the normally off AlGaN/GaN device exhibited an average drain current gain of 45.3%, which was confirmed through an analysis of transfer characteristics by changing the gate-to-source ramping. Accordingly, the proposed technique enabled the successful simulation of a 100-µm-wide device that can generate a saturation drain current of 1.4 A/mm at a gate-to-source voltage of 4 V, with a mobility of 1487 cm2V−1s−1. The advantages of the proposed technique are summarized herein in terms of processing and performance.

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Optimization of High-Voltage Wide Bandgap Semiconductor Power Diodes

Cited by 20 publications

References 20 publications

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps

Experimental evaluation of medium-voltage cascode gallium nitride (GaN) devices for bidirectional DC-DC converters

A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation

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