Optimization of Jc of YBCO thin films prepared by photo-assisted MOCVD through statistical robust design

Chou, P.; Zhong, Qun; Li, Q.L.; Abazajian, Kevork N.; Ignatiev, A.; Wang, C.Y.; Deal, Emily; Chen, J.G.

doi:10.1016/0921-4534(95)00563-3

Cited by 29 publications

(12 citation statements)

References 19 publications

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“…Film depositions were carried out with a single aerosol source MOCVD setup, described in detail elsewhere [21], which has been used to deposit various oxide films such as YBa 2 [13], La 1±x Sr x CoO 3 [22], and BaTiO 3 [12]. Briefly, a solution of the precursors is nebulized ultrasonically and the aerosol thus produced flows with the Ar carrier gas into a heated tube where evaporation of the solvent and precursors takes place.…”

Section: Methodsmentioning

confidence: 99%

“…[11] We tried to accelerate the diffusion mobility in the MOCVD of LaAlO 3 films by changing the film growth mechanism to one close to vapor±liquid±solid. It was accomplished by film deposition in the presence of volatile low melting point oxide; in our case bismuth oxide Bi 2 All films with composition close to the stoichiometry obtained at 950 C and higher, on all the substrates used, were crystalline. Thus, we succeeded in depositing crystalline LaAlO 3 films not only on perovskite type substrates but also on the substrates of other structural types, the films deposited at 1000 C being epitaxial or highly oriented, as will be shown below.…”

Section: Introductionmentioning

confidence: 99%

“…Several approaches of non-thermal activation, which affect surface mobility and/or process chemistry, have been developed for CVD, namely, plasma-, [1] photo-, [2] ultraviolet-, [3] and laser-activation, [4] etc.…”

Section: Introductionmentioning

confidence: 99%

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Volatile Surfactant-Assisted MOCVD: Application to LaAlO3 Thin-Film Growth

Molodyk¹,

Korsakov²,

Novojilov³

et al. 2000

Chem. Vap. Deposition

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A new approach to the CVD of oxides with kinetically hindered diffusion, called volatile surfactant-assisted (VSA) metal±or-ganic chemical vapor deposition (MOCVD), consisting of film deposition in the presence of a volatile low melting point oxide (Bi 2 O 3 ) has been developed. The process was applied to the deposition of LaAlO 3 films, and a model of the process was proposed. Epitaxial and textured LaAlO 3 films on various substrates were obtained, both by thermal and VSA MOCVD. A marked improvement in crystalline quality and surface morphology was found for the films deposited by VSA MOCVD. LaAlO 3 films obtained in the presence of Bi 2 O 3 did not contain Bi. A significant increase (up to five times) of the deposition rate was observed for LaAlO 3 films deposited by VSA MOCVD compared with that for the films grown by thermal MOCVD.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Volatile Surfactant-Assisted MOCVD: Application to LaAlO3 Thin-Film Growth

Molodyk¹,

Korsakov²,

Novojilov³

et al. 2000

Chem. Vap. Deposition

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“…Thin YBCO films ͑ϳ200-500 nm͒ with J c ϳ5ϫ10 6 A/cm 2 have been reproducibly grown. 9 A schematic of the PhAMOCVD system used for YBCO thick-film growth is shown in Fig. 1.…”

Section: Large J C Enhancement By Ion Irradiation For Thick Yba 2 Cu mentioning

confidence: 99%

Large Jc enhancement by ion irradiation for thick YBa2Cu3O7−δ films prepared by photoassisted metalorganic chemical vapor deposition

Ignatiev

Zhong

Chou

et al. 1997

Applied Physics Letters

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Critical current reduction in coated conductors when in-plane fields are applied J. Appl. Phys. 112, 073918 (2012) Surface texture and interior residual stress variation induced by thickness of YBa2Cu3O7-δ thin films J. Appl. Phys. 112, 053903 (2012) New application of temperature-dependent modelling of high temperature superconductors: Quench propagation and pulse magnetization J. Appl. Phys. 112, 043912 (2012) Flux-pinning-induced interfacial shearing and transverse normal stress in a superconducting coated conductor long strip

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“…11 The recently developed photo-assisted MOCVD as cited above, has however, shown the growth of high quality YBCO films under very high growth rates (> 0.8 µm/min). 9 The PhAMOCVD technique has been systematically optimized by a very effective statistical method, Robust Design, 8 to reproducibly yield thin films (∼ 0.2-0.5 µm) with J c = ∼ 5 × 10 6 A/cm 2 . In addition, film orientation can be controlled to yield films with either pure c-axis or pure a-axis orientation.…”

Section: Introductionmentioning

confidence: 99%

Photo-Assisted MOCVD Fabrication of YBCO Thick Films and Buffer Layers on Flexible Metal Substrates for Wire Applications

Ignatiev

Chou

Zhong

et al. 1998

Int. J. Mod. Phys. B

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Photo-assisted MOCVD has been developed for application to high-rate, high quality YBa 2 Cu 3 O 7−δ thin film production. This technique is now being applied to the fabrication of thick film YBa 2 Cu 3 O 7−δ on flexible metal substrates for wires and tapes. The unique application of photo-irradiation as the sole source of energy for the MOCVD reaction has resulted in extremely rapid growth rates for YBCO films with accompanying high superconducting performance. Typical YBCO films of thickness > 1 µm exhibit Jc ≥ 1 × 10 6 A/cm 2 and Tc > 90 K on single crystal oxide substrates. Such films have now been integrated to metal substrates such as single crystal Ni(100) and roll-textured nickel foil. YBCO films grown on textured Ni foils with CeO 2 and YSZ buffer layers show Jc ≈ 3 to 5 × 10 5 A/cm 2 for films of 1 µm thickness grown in 2 to 4 minutes time. Such performance for thick films made in such short growth time is promising for YBCO wire fabrication. The development of effective YBCO wire through thick film growth on flexible substrates also requires buffer layer application. Photo-assisted MOCVD has also been applied to buffer layer formation with promising results.

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Optimization of Jc of YBCO thin films prepared by photo-assisted MOCVD through statistical robust design

Cited by 29 publications

References 19 publications

Volatile Surfactant-Assisted MOCVD: Application to LaAlO3 Thin-Film Growth

Volatile Surfactant-Assisted MOCVD: Application to LaAlO3 Thin-Film Growth

Large Jc enhancement by ion irradiation for thick YBa2Cu3O7−δ films prepared by photoassisted metalorganic chemical vapor deposition

Photo-Assisted MOCVD Fabrication of YBCO Thick Films and Buffer Layers on Flexible Metal Substrates for Wire Applications

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