Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux

Koerperick, Edwin J.; Murray, L. M.; Norton, Dennis; Boggess, Thomas F.; Prineas, J. P.

doi:10.1016/j.jcrysgro.2009.10.033

Cited by 22 publications

(15 citation statements)

References 26 publications

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“…A high density of oval defects is observed. Similar oval defects have been observed, characterized with AFM as pits, 20 and interpreted with RHEED studies 21 to be resulting from Sb desorption from the surface. This interpretation is further supported by energy dispersive x-ray spectroscopy measurements on the pits from GaSb samples that were removed from the chamber following native oxide desorption and prior to ZnTe growth.…”

Section: Resultssupporting

confidence: 69%

Epitaxial growth of ZnTe on GaSb(100) using in situ ZnCl2 surface clean

Chen

Kim

Pan

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Section: Resultssupporting

confidence: 69%

Epitaxial growth of ZnTe on GaSb(100) using in situ ZnCl2 surface clean

Chen

Kim

Pan

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Typical growth temperatures for optimum quality of homoepitaxial InAs [19] and GaSb [20][21][22] are found in the range 480-550 1C (hatched area of Fig. 5), with GaSb usually found at the upper end of the range.…”

Section: Discussionmentioning

confidence: 98%

Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Svensson

Donetsky

Wang

et al. 2011

Journal of Crystal Growth

124

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“…It was assumed that weak dependence of the growth rate on the V/ III ratio did not influence the investigated parameters. The annealing and cooling conditions provided stabilisation of the Sb-surface during substrate heating and prohibited the Sb-condensation during the cooling stage after the growth termination [20]. The growth conditions and obtained results are shown in Table 1.…”

Section: Optimization Of Gasb Growthmentioning

confidence: 99%

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

et al. 2018

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A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried out. The studies were based on the static phase diagram for GaAs (001) surface and As 2 dimers on the surface. Prior to the initiation of the GaSb growth two attempts of the temperature decreasing were performed: before and after the GaAs termination. The GaAs was grown in the optimal conditions for GaSb material. The influence of the interruption time on GaSb/GaAs heterostructure parameters was examined. Two cases were investigated: with and without Sb-soaking of the GaAs surface. The periodic array of edge dislocations at GaSb/GaAs interface was confirmed using Burger's circuit theory. Careful examination of misfit surroundings revealed one uncompleted Burger's vector that indicated one dislocation of mixed type among eight of the edge type. The distance between lattice sites of dislocations was 5.51 nm on average. The crystal quality of 5.0 µm GaSb layer was characterized by FWHM 2θ/ω = 42 arcsec, FWHM RC = 125 arcsec. The EPD = 4 × 10 6 cm − 2 was estimated after etching in FeCl 3 :HCl solution. The Δq z /Δq x ratio of 0.60 for 5.0 µm GaSb layer was higher than for 2.5 µm GaSb layer of 0.59. The probable reason was the thickness-dependent 60° dislocation density. The electrical parameters measured for 2.5 µm GaSb were: p = 4.0 × 10 16 cm −3 (2.0 × 10 16 cm −3 ) and µ = 599 cm 2 /V s (3420 cm 2 /V s) at 300 K (77 K).

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Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux

Cited by 22 publications

References 26 publications

Epitaxial growth of ZnTe on GaSb(100) using in situ ZnCl2 surface clean

Epitaxial growth of ZnTe on GaSb(100) using in situ ZnCl2 surface clean

Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

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