Optimization of on-State and Switching Performances for 15–20-kV 4H-SiC IGBTs

Tamaki, T.; Walden, Ginger G.; Yang, Sui; Cooper, James A.

doi:10.1109/ted.2008.926965

Cited by 53 publications

(15 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…SIMULATED STRUCTURES 15kV 4H-SiC p-and n-IGBTs are simulated according to the real devices' I-V and switching results [4]. Table I summarizes the device parameters for different design of drift region lifetime and buffer layer width.…”

Section: IImentioning

confidence: 99%

“…Previous studies have discussed three phases of voltage ramp without considering the divergence of current density and back injection to the emitter in the charge continuity equation [3]. Efforts were made to suggest optimized buffer layer parameters by sweeping the parameters in the simulator for 15-20kV p-IGBTs [4]. 15kV 4H-SiC IGBTs have also been fabricated and compared for two different buffer layer designs [5].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs

Lee

Huang

et al. 2013

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

View full text Add to dashboard Cite

We propose a criterion to quantify the relationship between buffer layer parameters at a given total charge and turn-off speed for 4H-SiC IGBTs. Three phases of voltage ramp are analytically discussed during the inductive load turn-off by solving each corresponding continuity equation. Extra emphasis will be placed on Phase II -a transition phase in between the initial voltage ramp and punch-through.

show abstract

Section: IImentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs

Lee

Huang

et al. 2013

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

View full text Add to dashboard Cite

show abstract

“…2 was used to investigate the switching characteristics of the 4H-SiC DMOSFETs under a resistive load. The circuit was designed to provide a current path from the supply voltage V DC =100 V and a bus capacitor C DC =1 µF to the resistive load R DC =250 kΩ and 4H-SiC DMOSFETs [8,9].…”

Section: Resistive Load Switchingmentioning

confidence: 99%

Impact of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

Kang¹,

Bahng²,

Kim

et al. 2012

Journal of Electrical Engineering and Technology

View full text Add to dashboard Cite

-In this paper, we study the transient characteristics of 4H-SiC DMOSFETs with different interface charges to improve the turn-on rising time. A physics-based two-dimensional mixed device and circuit simulator was used to understand the relationship between the switching characteristics and the physical device structures. As the SiO 2 /SiC interface charge increases, the current density is reduced and the switching time is increased, which is due primarily to the lowered channel mobility. The result of the switching performance is shown as a function of the gate-to-source capacitance and the channel resistance. The results show that the switching performance of the 4H-SiC DMOSFET is sensitive to the channel resistance that is affected by the interface charge variations, which suggests that it is essential to reduce the interface charge densities in order to improve the switching speed in 4H-SiC DMOSFETs.

show abstract

“…In past several years, some high-voltage 4H-SiC IGBTs with the breakdown voltage in range from 10 to 22 KV have been reported [12][13][14][15][16][17][18][19][20][21][22][23][24]. However, these works mostly focus on planar gate 4H-SiC IGBT and a few studies about 4H-SiC trench IGBT [12,15,22].…”

Section: Introductionmentioning

confidence: 99%

4H-SiC trench IGBT with lower on-state voltage drop

Liu

Wang

et al. 2017

Superlattices and Microstructures

View full text Add to dashboard Cite

In this paper, a new 4H-SiC trench-gate IGBT structure incorporated a P + shielding region in the emitter side is proposed in order to reduce the on-state voltage drop. Through the 2-D ATLAS simulation, the characteristics of the proposed structure are investigated and compared with the conventional structure. The simulation results indicate that the proposed structure exhibits an improvement in the following. Firstly, the on-state voltage drop is reduced by 32.75%. Secondly, the differential specific on-resistance is reduced by 42.33%. Finally, under the same on-state voltage drop, the turn-off energy is reduced more than 50.00%. At the end of the paper, it is explored that what effects the physical parameter of the P + shielding region in the proposed structure have on the steady state performances.

show abstract

Optimization of on-State and Switching Performances for 15–20-kV 4H-SiC IGBTs

Cited by 53 publications

References 12 publications

An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs

An analytical investigation of the effect of varied buffer layer designs on the turn-off speed for 4H-SiC IGBTs

Impact of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

4H-SiC trench IGBT with lower on-state voltage drop

Contact Info

Product

Resources

About