Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach

Kushwaha, Aniruddha; Mahala, Pramila; Dhanavantri, C.

doi:10.1155/2014/819637

Cited by 16 publications

(3 citation statements)

References 18 publications

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“…The unintentionally doped InGaN segments of the u-InGaN/p-GaN NWs were assumed to have an n-type background doping level of 5 × 10 16 cm -3 , whereas the doping level of the p-type GaN seeds was in accordance with the Mott-Schottky results. Other physical parameters in the PC1D model were either extracted from the literature [27][28][29][30][31][32][33] or specified from the SEM and PL results.…”

Section: Methodsmentioning

confidence: 99%

Improved solar hydrogen production by engineered doping of InGaN/GaN axial heterojunctions

et al. 2019

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InGaN-based nanowires (NWs) have been investigated as efficient photoelectrochemical (PEC) water splitting devices. In this work, the InGaN/GaN NWs were grown by molecular beam epitaxy (MBE) having InGaN segments on top of GaN seeds. Three axial heterojunction structures were constructed with different doping types and levels, namely n-InGaN/n-GaN NWs, undoped (u)-InGaN/p-GaN NWs, and p-InGaN/p-GaN NWs. With the carrier concentrations estimated by Mott-Schottky measurements, a PC1D simulation further confirmed the band structures of the three heterojunctions. The u-InGaN/p-GaN and p-InGaN/p-GaN NWs exhibited optimized stability in pH 0 electrolytes for over 10 h with a photocurrent density of about -4.0 and -9.4 mA/cm 2 , respectively. However, the hydrogen and oxygen evolution rates of the Pt-treated u-InGaN/p-GaN NWs exhibited a less favorable stoichiometric ratio. On the other hand, the Pt-decorated p-InGaN/p-GaN NWs showed the best PEC performance, generating approximately 1000 µmol/cm 2 hydrogen and 550 µmol/cm 2 oxygen in 10 h. The band-engineered p-InGaN/p-GaN axial NWsheterojunction demonstrated a great potential for highly efficient and durable photocathodes.

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Section: Methodsmentioning

confidence: 99%

Improved solar hydrogen production by engineered doping of InGaN/GaN axial heterojunctions

et al. 2019

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“…These exclusive properties provide an inimitable chance to develop high efficiency solar cells [10]. In addition to the direct and tunable band gap, In x Ga 1-x N alloys show that other special properties include high mobility of carriers and high radiation resistance suggesting an excessive advantage for design and construction of high efficiency solar cells [11]. Moreover, nitride-based materials due to their high stability against cosmic rays are great options for use in tandem solar cells as a top layer, especially if they are placed next to perovskite materials which may be used as the bottom layer due to their low stability [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Nitride/Perovskite Tandem Solar Cell with High Stability: Analytical Study of Adjusting Current Matching Condition

Piralaee

Asgari

2023

International Journal of Energy Research

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One of the essential challenges of tandem solar cells is designing and adjusting the current-matched tandem structures with high efficiency and stability. Nitride-based wide band gap semiconductors, owing to their high stability and high resistance against the cosmic rays, are appropriate elements to apply as the top cell of tandem solar cells. On the other hand, the organic-inorganic hybrid perovskites are emerging materials with exclusive electronic properties such as tunable band gap, low cost, simple manufacturing process, and efficient charge transport properties, making them capable candidates to be used in tandem layered structures. The aim of this paper is to adjust and optimize the performance of a two-terminal tandem solar cell consisting of InxGa1-xN as the top cell and a FAPbIyBr3-y as the bottom cell. We have studied the effect of different practical parameters such as the indium molar of the top cell, iodine molar of the bottom cell, the thickness of each layer, threading dislocation density of InxGa1-xN, and surface texturing effect on the performance of the two-terminal tandem structure. Because of the prominence of current matching problem in two-terminal tandem structures, we have determined the optimum situation for maximum light harvesting along with the minimum value of current matching factor. In the optimum situation, the current matching factor of 0.15 mA/cm2 leads to the power conversion efficiency of 25.17% for the device.

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“…However, thick layers of InGaN require a high indium concentration, which imposes a constraint on the experimental procedure (Kour et al , 2020). Indeed, indium accumulates in the active layer, resulting in a significant valence band offset, which reduces performance (Kushwaha et al , 2014).…”

Section: Introductionmentioning

confidence: 99%

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

Hamzah

Sahar²,

Tan³

et al. 2022

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Purpose This study aims to investigate the effects of indium composition on surface morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) heterostructures. Design/methodology/approach The InGaN/GaN heterostructures were grown on flat sapphire substrates using a metal-organic chemical vapour deposition reactor with a trimethylindium flow rate of 368 sccm. The indium composition of the InGaN epilayers was controlled by applying different substrate temperatures. The surface morphology and topography were observed using field emission scanning electron microscope (F.E.I. Nova NanoSEM 450) and atomic force microscopy (Bruker Dimension Edge) with a scanning area of 10 µm × 10 µm, respectively. The compositional analysis was done by Energy Dispersive X-Ray Analysis. Finally, the ultraviolet-visible (UV-Vis) spectrophotometer (Agilent Technology Cary Series UV-Vis-near-infrared spectrometer) was measured from 200 nm to 1500 nm to investigate the optical properties of the samples. Findings The InGaN/GaN thin films have been successfully grown at three different substrate temperatures. The indium composition reduced as the temperature increased. At 760 C, the highest indium composition was obtained, 21.17%. This result was acquired from the simulation fitting of ω−2θ scan on (0002) plane using LEPTOS software by Bruker D8 Discover. The InGaN/GaN shows significantly different surface morphologies and topographies as the indium composition increases. The thickness of InGaN epilayers of the structure was ∼300 nm estimated from the field emission scanning electron microscopy. The energy bandgap of the InGaN was 2.54 eV – 2.79 eV measured by UV-Vis measurements. Originality/value It can be seen from this work that changes in substrate temperature can affect the indium composition. From all the results obtained, this work can be helpful towards efficiency improvement in solar cell applications.

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Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach

Cited by 16 publications

References 18 publications

Improved solar hydrogen production by engineered doping of InGaN/GaN axial heterojunctions

Improved solar hydrogen production by engineered doping of InGaN/GaN axial heterojunctions

Nitride/Perovskite Tandem Solar Cell with High Stability: Analytical Study of Adjusting Current Matching Condition

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

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