Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers

Fuentes-Fernandez, Erika M. A.; Baldenegro-Pérez, L.A.; Quevedo‐Lopez, Manuel; Gnade, Bruce E.; Hande, Abhiman; Shah, P.; Alshareef, Husam N.

doi:10.1016/j.sse.2011.05.027

Cited by 8 publications

(9 citation statements)

References 16 publications

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“…The 0.9Pb(Zr 0.53 ,Ti 0.47 )O 3 -0.1Pb(Zn 1/3 ,Nb 2/3 )O 3 films were deposited by spin-coating then crystalized at 675°C for 30 min in air. 13 The PZT-PZN thin films were deposited on two stacks that differed by inclusion of a 3 lm thick poly-Si layer on one, as shown in Fig. 1.…”

Section: Methodsmentioning

confidence: 99%

“…There are five types of electromechanical transducer: electromagnetic, 7,8 electrostatic, [8][9][10] magnetostrictive, 11 triboelectric, 12 and piezoelectric. 5,8,10,[13][14][15] The ease of integration of piezoelectric transducers into microscale devices make them a good option for energy harvesting applications in silicon-compatible technology. 10 Identification of materials with piezoelectric properties has therefore become of great interest.…”

Section: Introductionmentioning

confidence: 99%

“…10 Identification of materials with piezoelectric properties has therefore become of great interest. 13,14,16 Evaluation of the piezoelectric properties of thin films for integrated energy-harvesting devices has primarily focused on Pb(Zr,Ti)O 3 , or PZT. 2,17 Recently, bulk relaxor ferroelectrics have also been studied for energy-harvesting applications; these perform substantially better than conventional PZT.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Relaxer-Based Piezoelectric Energy Harvesters Using a Sacrificial Poly-Si Seeding Layer

Fuentes-Fernandez

Salomon-Preciado

Gnade

et al. 2014

Journal of Elec Materi

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The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr 0.53 ,Ti 0.47 )O 3 -Pb(Zn 1/3 ,Nb 2/3 )O 3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 lW/cm 2 .

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fabrication of Relaxer-Based Piezoelectric Energy Harvesters Using a Sacrificial Poly-Si Seeding Layer

Fuentes-Fernandez

Salomon-Preciado

Gnade

et al. 2014

Journal of Elec Materi

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“…• C using what we call "a fast ramp rate" (a few seconds to insert the samples manually into the preheated furnace), and the use of a PbTiO 3 (PT) nucleation layer between TiO 2 and the PZT-PZN [9,19,20].…”

Section: Materials Characterizationmentioning

confidence: 99%

Synthesis and Characterization of Pb(Zr, Ti)O-Pb(Nb, Zn)O Thin Film Cantilevers for Energy Harvesting Applications

Fuentes-Fernandez

Debray-Mechtaly

Quevedo‐Lopez

et al. 2012

Smart Materials Research

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A complete analysis of the morphology, crystallographic orientation, and resulting electrical properties of Pb(Zr 0.53 ,Ti 0.47 )O 3 − Pb(Nb 1/3 , Zn 2/3 )O 3 (PZT-PZN) thin films, as well as the electrical behavior when integrated in a cantilever for energy harvesting applications, is presented. The PZT-PZN films were deposited using sol-gel methods. We report that using 20% excess Pb, a nucleation layer of PbTiO 3 (PT), and a fast ramp rate provides large grains, as well as denser films. The PZT-PZN is deposited on a stack of TiO 2 /PECVD SiO 2 /Si 3 N 4 /thermal SiO 2 /Poly-Si/Si. This stack is designed to allow wet-etching the poly-Si layer to release the cantilever structures. It was also found that the introduction of the poly-Si layer results in larger grains in the PZT-PZN film. PZT-PZN films with a dielectric constant of 3200 and maximum polarization of 30 µC/cm 2 were obtained. The fabricated cantilever devices produced ∼300-400 mV peak-to-peak depending on the cantilever design. Experimental results are compared with simulations.

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“…Many author s have reported on their progress towards general purpose displacement actuators, such as Duval et al [1], Luginbuhl et al, [2] and Hoffmann et al [3]. Also many author s have reported on methods to use these devices for energy harvesting purposes, such as Jeon et al [4], Reilly et al [5], Fuentes-Fernandez et al [6], Roundy et al [7] and Choi et al [8] and Kim[9] The application of these devices in Atomic Force Microscopy is reported by Fujii et al [10], while the application in micromechanical switches is described by Gross et al, [11].…”

Section: Introductionmentioning

confidence: 99%

Nondestructive method for measurement of piezoelectric and dielectric constant, elastic modulus and specific density of thin film piezoelectric cantilevers

Smits¹

2012

2012 IEEE International Ultrasonics Symposium

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A cantilever composed of a nonpiezoelectric substrate covered by a piezoelectric thin film, sandwiched between electrodes is considered. A tipmass m is present at the tip of the cantilever, and its influence in the total capacitance is determined. For two identical devices, one with a large tipmass, the other without tipmass, a set of 12 measurements of capacitances at certain frequencies has been developed that allows calculation of the elastic modulus, piezoelectric and dielectric constants, and the specific density of the piezoelectric film, without touching or exerting a force on the device. The accuracy of these calculations as function of the tipmass to beam mass ratio is presented.

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Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers

Cited by 8 publications

References 16 publications

Fabrication of Relaxer-Based Piezoelectric Energy Harvesters Using a Sacrificial Poly-Si Seeding Layer

Fabrication of Relaxer-Based Piezoelectric Energy Harvesters Using a Sacrificial Poly-Si Seeding Layer

Synthesis and Characterization of Pb(Zr, Ti)O-Pb(Nb, Zn)O Thin Film Cantilevers for Energy Harvesting Applications

Nondestructive method for measurement of piezoelectric and dielectric constant, elastic modulus and specific density of thin film piezoelectric cantilevers

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