1995
DOI: 10.1016/0927-0248(94)00202-9
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Optimization of photoelectrochemical solar cells based on polycrystalline CdTe film photoanode

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Cited by 10 publications
(2 citation statements)
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“…The PCE of c-Si and thin film technologies of CdTe, CIGS have saturated at ~26% and 23%, respectively within the past decade. [5][6][7][8] Single junction silicon photovoltaic cell can produce an ideally maximum of PCE up to 31-33% theoretically derived by fundamental Shockley-Queisser (SQ) limit. 9 Even after two decades, the efficiency of the single junction silicon photovoltaic technology is stuck at a maximum of about 26% practically due to auger and defect recombination.…”
Section: Introductionmentioning
confidence: 99%
“…The PCE of c-Si and thin film technologies of CdTe, CIGS have saturated at ~26% and 23%, respectively within the past decade. [5][6][7][8] Single junction silicon photovoltaic cell can produce an ideally maximum of PCE up to 31-33% theoretically derived by fundamental Shockley-Queisser (SQ) limit. 9 Even after two decades, the efficiency of the single junction silicon photovoltaic technology is stuck at a maximum of about 26% practically due to auger and defect recombination.…”
Section: Introductionmentioning
confidence: 99%
“…PECs consist generally of a semiconducting photoanode and a metal cathode immersed in an electrolyte. The semiconducting photoanode has early a shape of thin film such as n-Si film [2], n-CdSe 0.6 Te 0.4 film [3], CuGaSe 2 and Cu(Ga,In)Se 2 film [4], CdTe film [5], and so on, and has latterly a shape of nanowire or nanorod such as carbon nanotubes, CdSe, and Cd(Se,Te) nanorods [6][7][8], Si nanowires [9], indium phosphate nanowires [10], ZnO nanorod [11], and so on. The electrolyte should contain reducing agents and oxidizing agents for carrying out the redox reactions.…”
Section: Introductionmentioning
confidence: 99%