Optimization of residual stress of SiO 2 /organic silicon stacked layer prepared using inductively coupled plasma deposition

Hsu, Chia-Hsun; Cho, Yun-Shao; Liu, Ting-Xuan; Chang, Hsi-Wei; Lien, Shui−Yang

doi:10.1016/j.surfcoat.2016.12.107

Cited by 7 publications

(4 citation statements)

References 23 publications

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“…The plasma radical intensities were obtained by the optical emission spectroscopy (OES, SD2048DL, Verity, Carrollton, TX, USA) from 350 to 800 nm. The peaks at 696.3, 706.8, 738.3, 750.3, 763.5, 772.3, and 794.8 nm are assigned to the Ar* lines [ 31 , 32 , 33 , 34 ], while the peak at 777 nm is designated to the O* line [ 31 , 32 , 33 , 34 ]. The Ar* lines intensities are summed and illustrated in Figure 1 b (together with the O* line intensity).…”

Section: Methodsmentioning

confidence: 99%

Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

et al. 2021

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In this study, the effect of radical intensity on the deposition mechanism, optical, and electrical properties of tin oxide (SnO2) thin films is investigated. The SnO2 thin films are prepared by plasma-enhanced atomic layer deposition with different plasma power from 1000 to 3000 W. The experimental results show that plasma contains different amount of argon radicals (Ar*) and oxygen radicals (O*) with the increased power. The three deposition mechanisms are indicated by the variation of Ar* and O* intensities evidenced by optical emission spectroscopy. The adequate intensities of Ar* and O* are obtained by the power of 1500 W, inducing the highest oxygen vacancies (OV) ratio, the narrowest band gap, and the densest film structure. The refractive index and optical loss increase with the plasma power, possibly owing to the increased film density. According to the Hall effect measurement results, the improved plasma power from 1000 to 1500 W enhances the carrier concentration due to the enlargement of OV ratio, while the plasma powers higher than 1500 W further cause the removal of OV and the significant bombardment from Ar*, leading to the increase of resistivity.

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Section: Methodsmentioning

confidence: 99%

Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

et al. 2021

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“…After comparing many investigations, Bis(diethylamino)silane (BDEAS) is the usual precursor for depositing SiO 2 due to its chemical stability. Argon (Ar) and oxygen (O 2 ) are the most commonly used gases that can effectively generate plasma because of their stability and unique electronegativity [ 20 , 21 ], respectively. Ar and O 2 molecules are activated into excited atoms.…”

Section: Introductionmentioning

confidence: 99%

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

et al. 2021

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In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO2 thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO2 films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO2 thin films was also investigated. As the annealing temperature increases, the SiO2 thin film becomes denser, leading to a higher refractive index and a lower etch rate.

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“…However, a fragile passive thin film can be easily degraded by carbonization; CO 2 transported to the surface of the steel bar reacts with Ca(OH) 2 in the concrete, or chloride ions penetrate the surface of the steel causing corrosion to occur [3,4]. Therefore, to avoid the corrosion, many technological approaches have been developed to protect steel rebar, including coating with organic layers [5,6], polymer coatings [7], the formation of oxide layers [8], cathodic protection [9], and coating with other metals or alloys [10].…”

Section: Introductionmentioning

confidence: 99%

Effect of Inhibitor on Adsorption Behavior and Mechanism of Micro-Zone Corrosion on Carbon Steel

Wang

Zhang

et al. 2019

Materials

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A new type of inhibitor is studied in this paper. Inhibition efficiency and adsorption behavior of an inhibitor film on the steel surface is tested via the electrochemical method and theoretical calculation to establish the adsorption model. Test results confirm that inhibition efficiency is improved with the addition of an inhibitor, and the inhibitor film is formed firmly by comparing the characteristic peaks of S and N. Moreover, the micro-zone corrosion progress of Fe in 3.5% invasive NaCl-simulated seawater environment is studied. The results further show that corrosion is initiated under the zone without the inhibitor film, while it is prevented under the protection of the film. By the experiments, it is shown that inhibitor can be adsorbed on the surface of steel stably and has excellent protection performance for reinforced rebar, which can be widely used in concrete structure.

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Optimization of residual stress of SiO 2 /organic silicon stacked layer prepared using inductively coupled plasma deposition

Cited by 7 publications

References 23 publications

Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Effect of Inhibitor on Adsorption Behavior and Mechanism of Micro-Zone Corrosion on Carbon Steel

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