2012
DOI: 10.1007/s10836-012-5281-8
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Optimization of SEU Simulations for SRAM Cells Reliability under Radiation

Abstract: A simplified RC circuit is used to simulate effects of ionizing particles in a 90 nm SRAM. The main characteristics of the memory cell bit flip are discussed and a SEU criterion is presented. The effect of the surrounded circuit on the struck transistor is also discussed in order to extract parameters characteristic of the SEU occurrence.

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Cited by 2 publications
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“…This zone corresponds to a linear response of the system in the range ±10 %. When results are out of this zone, the resolution is clearly degraded [13] and the pulse characteristics are also not suitable with the resolution of our system. In order to improve the efficiency of the detection and the tracking ability, a 3x3 matrix is modeled and analyzed (Fig.6).…”
Section: Exploration Of the Limit Of Detectionmentioning
confidence: 93%
“…This zone corresponds to a linear response of the system in the range ±10 %. When results are out of this zone, the resolution is clearly degraded [13] and the pulse characteristics are also not suitable with the resolution of our system. In order to improve the efficiency of the detection and the tracking ability, a 3x3 matrix is modeled and analyzed (Fig.6).…”
Section: Exploration Of the Limit Of Detectionmentioning
confidence: 93%