Optimization of Silicon Solar Cell Base Thickness, While Illuminated by a Long Wavelengthmonochromatic Ligth: Influence of Both Lorentz Law and Umklapp Process

Abstract

The optimum thickness of a silicon solar cell base is determined using phenomelogic parameters, which are the minority carriers diffusion coefficient and the recombination velocity at the back side, influenced by Lorentzs law and the Umklapp process.The results obtained are consistent with the generation of minority charge carriers deep in the base by a monochromatic light of long wavelength.

Optimization of the base thickness of an (n+/p/p+) bifacial silicon solar cell illuminated from the back side, using short-wavelength light: Resonance Effect on the diffusion coefficient in temperature under applied magnetic field

“…This graphical [28,[31][32][33][34][35][36][37][38] technique gives the optimum base thickness at the intercept point of Sb1 and Sb2, for given (Dmax) value. Extracted optimum thickness (Hopt) is plotted versus maximum diffusion coefficient on Figure.…”

“…These surfaces are therefore the seat of recombination velocity [19][20][21][22][23][24][25] , (Sf) at the junction and (Sb) at the rear side. These phenomenological [26][27][28][29] parameters, which are (L, τ, μ, D, Sf, Sb and Sg) as well as (α(λ)), contribute to the search for the optimum thickness [30][31][32][33][34][35][36][37][38] of the base for a significant production of photocurrent. Indeed, the dimensioning of the different regions [39][40][41] that constitute the solar cell, including the base [42,43] , is very important in research for the improvement [44][45][46] of photovoltaic efficiency and the industrial production chain.…”

“…The determination of the optimum thickness [43,[58][59][60][61] of the base is very important and the technique used in this work, goes through the graphical representation of the analytical expressions of the recombination velocity [20] on the back side (Sb0(D, H) and Sb1(α(λ), D, H ) as a function of the thickness (H) of the base, for various values of excess minority carriers diffusion coefficient D(B, T), in a situation of temperature resonance [32,33,54,62] . The results obtained highlight the effect of the absorption coefficient (low penetration and generation), thermal agitation (T) and deflection (B), on excess minority carriers and then, lead to the reduction of the base thickness and optimization of the quantity of material useful for the realization of a bifacial solar cell.…”

Optimisation de l’épaisseur de la base de la photopile (n+/p/p+) au silicium en régime statique sous éclairement polychromatique : Influence de la température et du taux de dopage

“…Cette expression est graphiquement représentée en fonction de l'épaisseur (H), de la photopile de taux de dopage (Nb) donné et maintenue à la température (T). Cette technique appliquée, tient compte des conditions réelles de fonctionnement de la photopile, à travers la qualité spectrale de la lumière (polychromatique) à flux constant, du taux de dopage [16,20] et de la variation de la température [22][23][24] . L'épaisseur optimum (Hopt( D(Nb,T), bi) obtenue est ensuite modélisée en fonction de la température (T), pour différentes valeurs du taux de dopage (Nb) de la base de la photopile.…”

Diffusion Coefficient at Double Resonances in Frequency and Temperature, Applied to (n<sup>+</sup>/p/p<sup>+</sup>) Silicon Solar Cell Base Thickness Optimization under Long Wavelength Illumination

“…The dual action of the magnetic field and temperature produced an optimum resonance temperature [34], the boundary between the normal process and the Umklapp process. The optimum thickness obtained (Figure 5 and Figure 6), for an incident illumination on the front side, decreases respectively with the two parameters of temperature and magnetic field [68] [69] [70] [71].…”