Optimization of structural and technological parameters of the field effect Hall sensor

Volchek, V.; Lovshenko, I. Yu.; Stempitsky, V. R.; Ha, Dao Dinh; Belous, Anatoly; Saladukha, Vitali

doi:10.1109/atc.2015.7388410

2015 International Conference on Advanced Technologies for Communications (ATC) 2015

DOI: 10.1109/atc.2015.7388410

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Optimization of structural and technological parameters of the field effect Hall sensor

V. Volchek

I. Yu. Lovshenko

V. R. Stempitsky

et al.

Abstract: The results of optimization of magnetically sensitive element Field Hall sensor based on the MIS structure formed on a "silicon-on-insulator" (SOI LSF) parameters was presented. Main characteristics of device structure were defined using the results of Silvaco software simulation.

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Optimization of structural and technological parameters of the field effect Hall sensor

Abstract: The results of optimization of magnetically sensitive element Field Hall sensor based on the MIS structure formed on a "silicon-on-insulator" (SOI LSF) parameters was presented. Main characteristics of device structure were defined using the results of Silvaco software simulation.

Cited by 0 publications

References 4 publications

No citations

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