Optimization of the Cell Structure for Radiation-Hardened Power MOSFETs

Abstract

Power MOSFETs specially designed for space power systems are expected to simultaneously meet the requirements of electrical performance and radiation hardness. Radiation-hardened (rad-hard) power MOSFET design can be achieved via cell structure optimization. This paper conducts an investigation of the cell geometrical parameters with major impacts on radiation hardness, and a rad-hard power MOSFET is designed and fabricated. The experimental results validate the devices' total ionizing dose (TID) and single event effects (SEE) hardness to suitably satisfy most space power system requirements while maintaining acceptable electrical performance.

Radiation Tolerant Electronics

“…Two papers discuss the effect of radiation on advanced semiconductor devices such as dedicated power MOSFETs and double-polysilicon self-aligned bipolar transistors. In [1], the effects of cell structure adjustment on the performance of a power MOSFET were examined by first analyzing the design parameters. Next, a SEE-and TID-hardened power MOSFET was designed and fabricated.…”

Design and fabrication of Low Gain Avalanche Detectors (LGAD): a TCAD simulation study

“…As an example, figure 5 shows the fill factor as a function of the JTE width for a fixed distance between JTE and sensor edge of 80 µm. IHEP is collaborating with the Tianjin Zhonghuan Semiconductor Company [14] to fabricate this LGAD sensor. IHEP has optimized the JTE process to obtain a high breakdown voltage using the Zhonghuan process.…”

“…The authors would like to acknowledge: the funding by the State Key Laboratory of Particle Detection and Electronics, SKLPDE-ZZ-201911 project and SKLPDE-ZZ-202001 project; the colleagues from the HGTD IHEP group for their guidance and support; the department of Microelectronics and Nanoelectronics, Tsinghua University for their advice and resources [14]; Wanli Wang and Zixu Dong from Tianjin Zhonghuan Semiconductor Co., Ltd. for their help on device fabrication; the INFIERI committee for supporting the first author to participate in the 5th Summer School on INtelligent signal processing for FrontIEr Research and Industry.…”

A Methodology for Accelerating FPGA Fault Injection Campaign Using ICAP

“…In recent years, the constant advances in Integrated Circuit (IC) manufacturing technology, such as shrinking, high package density, and low operating voltage, have led to increased radiation susceptibility. This is no longer just a concern for space applications, as even commercially used nanoscale circuits at sea level have become more susceptible to particles present in the atmosphere [1][2][3][4]. The widespread presence of ICs in various fields, including aerospace, military, medical systems, and even household appliances, such as Internet of Things (IoT) systems, makes fault-tolerant techniques increasingly important for space and terrestrial applications [5][6][7].…”