Optimization of the construction of the reaction chamber on temperature distribution in a semiconductor plate on heating by incoherent radiation

Modification of properties of the glass-Si3N4-Si-SiO2 structure at laser treatment

“…Until now, considerable experience has been gained in application of laser irradiation at different stages of manufacturing of semiconductor devices and integrated circuits [1][2][3]. Laser treatment is profitably employed to anneal the crystal structure defects in semiconductor layers and improve the silicon surfaces and, accordingly, the "siliconoxidemetal" interfaces when producing integrated circuits [4].…”