Optimization of the HBT and bump configuration for bump heat sink structure and application to HBT power MMICs

Sato, H.; Hasegawa, M.; Miyauchi, M.; Twynam, J.K.; Sakuno, K.; Akagi, Masataka; Yamamura, Keiji; Miyajima, Takashi

doi:10.1016/0038-1101(95)00053-v

Cited by 2 publications

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“…The proper thermal management by lowering the thermal resistance allows the heat to be conducted properly away from the junctions. Solutions varies from thinning the 111-V substrates (conventional) to thermal metal shunt with heat spreader and flip-chip (with Plated Au Bumps) as new approaches [13][14]. The thermal resistivity of InGaAs is 15-20 times larger than InP; therefore, it is better to use highly doped InP in the subcollector to improve the thermal management of InP HBTs [ 1 11.…”

Section: Improving Inp Hbts Performancementioning

confidence: 99%

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Fabrication of InP heterostructure bipolar transistors for 40 Gb/s communication systems

Abid

ICM 2000. Proceedings of the 12th International Conference on Microelectronics. (IEEE Cat. No.00EX453)

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InP Heterostructure Bipolar Transistors (HBT) are known for their high speed and easy integration with optical devices. Its technology is in general still developing. High frequency InP HBTs were fabricated. Some device and layer structure design improvements for 40Gbit/s communications systems application will be suggested. The necessary conditions to manufacture it will be presented. Various collector structures are used to increase its breakdown voltage while maintaining its speed and gain.

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Section: Improving Inp Hbts Performancementioning

confidence: 99%

“…(For the 3000A InGaAsP of structure 3, use "Dry etch" of step 13). 13 The emitter can be InAlAs instead of InP. Such devices were also fabricated but using only large area HBT process.…”

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confidence: 99%