Optimization of the nanopore depth to improve the electroluminescence for GaN-based nanoporous green LEDs

Yu, Zhiguo; Zhao, Lixia; Zhu, Song; Wei, Xianhua; Sun, Xiankai; Liu, Lei; Wang, Junxi; Li, Jinmin

doi:10.1016/j.mssp.2015.01.039

Cited by 7 publications

(5 citation statements)

References 20 publications

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“…Much progress has been made in LEE by nanostructures on emission surface of green LEDs 1 2 3 4 5 6 7 8 9 10 11 . These structures are fabricated by electron beam lithography (EBL) 1 2 , laser interference lithography (LIL) 3 4 , nanoimprint lithography (NIL) 5 6 7 8 9 , and anodic aluminum oxide (AAO) 10 11 . The LEE enhancements for the patterned green LEDs in the above reports range 19% to 25 times compared to the planar ones, depending on the nanostructure parameters and LEE measuring conditions.…”

mentioning

confidence: 99%

“…As to the AAO technique, self-organized wet etching of aluminium in spatially regular, triangular order seems to be the simplest and lowest cost one among all the above methods 12 . However, it is disposable and not easy to transfer the AAO pattern to the emission surface directly, especially in mass production 10 11 .…”

mentioning

confidence: 99%

“…However, there are no clear pictures about the guided mode extracted from AAO pattered LED surface. Some researchers only consider the light emitting from the top of the LEDs when measuring the enhancement of the AAO structure, which cannot understand the extraction process without examination the coupling modes extracted out from the AAO pattern 10 11 19 . Therefore, it is necessary to develop an accurate measurement to investigate the light extraction mechanism of quasi-period PhCs structures using AAO pattern.…”

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confidence: 99%

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Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

Jiang

Feng

Chen

et al. 2016

Sci Rep

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An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A significant light extraction efficiency (LEE) was improved by 116% in comparison to that of the planar LED. A uniform broad protrusion in the central area and some sharp lobes were also obtained in the angular resolution photoluminescence (ARPL) for the AAO patterned LED. The mechanism of the enhancement was correlated to the fluctuations of the lattice constant and domain orientation of the AAO-pattern, which enabled the extraction of more guided modes from the LED device.

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

Jiang

Feng

Chen

et al. 2016

Sci Rep

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“…As shown in Figure 1(b), a classical dipole source embedded between the p-GaN layer and the n-GaN layer was used to represent the carrier recombination within the active layer. The emission wavelengths were set as 620 nm, 520 nm, and 465 nm which are most representative of red, green, and blue light emissions, respectively [22][23][24].…”

Section: Model Of Simulation and Numerical Methodsmentioning

confidence: 99%

Using Three-Component Hierarchical Structures to Improve the Light Extraction From White Leds Based on Red-Green-Blue Color Mixing Method

Li¹,

Li²,

Kong³

et al. 2017

PIER C

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Abstract-In this work, we present a three-component hierarchical structure to simultaneously improve the red, green, and blue (RGB) light extraction efficiency (LEE) of white light-emitting diodes (LEDs) based on color mixing method. With the help of 3D finite-difference time-domain (FDTD) simulations, the effects of the embedded photonic crystals (PhCs) the normal surface PhCs and the nano-rods on the enhancement of RGB light extraction were investigated. The results were compared with those of the conventional planar LEDs and the normal surface PhCs LEDs over the whole visible spectrum. Results from the simulations demonstrated that the maximum LEE for the hierarchical structures LEDs gave 112%, 327%, and 284% RGB LEE enhancement, respectively, compared to that of the conventional planar LEDs, and achieved 104%, 191%, and 187% RGB LEE enhancement compared to that of LEDs with normal surface PhCs. The emission characteristics of the hierarchical structures LEDs were also revealed in detail by FDTD simulations. The results shown in this paper would do a favor for the design and fabrication of high efficiency LEDs.

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“…A vast scientific effort has been made during the last decade to find the best and commercially reasonable solution. Many different surface treatment techniques like electron beam lithography, laser interface lithography, nanoimprint lithography or anodic aluminum oxide were successfully established [2][3][4][5][6][7][8][9]. Unfortunately, these methods are expensive, time-consuming or unsuitable for large-scale wafer manufacturing and their LEE varies from tens to hundreds of percent, depending on the layer parameters and LEE measuring conditions [10].…”

Section: Introductionmentioning

confidence: 99%

Nanostructured layer enhancing light extraction from GaN-based scintillator using MOVPE

Vaněk

Hubáček

Hájek

et al. 2020

NANOCON Conference Proeedings

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Light extraction (LE) efficiency of GaN buffer layer was studied by angle-resolved photoluminescence. We measured enhancement of light extraction efficiency (LEE) up to 154% by introducing the SiNx layer atop the GaN buffer and subsequent GaN light extraction layer (LEL) overgrowth. Morphological properties of GaN "islands" forming the LEL, such as size and density, have been tuned by various growth parameters. Subsequently, the influence of different growth parameters, such as coalescence time, time of SiNx growth or type of nucleation carrier gas (H2 or N2), on LE was discussed. We also experimentally showed that LE of this layer is more efficient for higher extraction angles. Finally, we present the change in the GaN surface morphology by Si etching in H2 atmosphere during SiNx growth (measured by the atomic force microscopy).

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Optimization of the nanopore depth to improve the electroluminescence for GaN-based nanoporous green LEDs

Cited by 7 publications

References 20 publications

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

Using Three-Component Hierarchical Structures to Improve the Light Extraction From White Leds Based on Red-Green-Blue Color Mixing Method

Nanostructured layer enhancing light extraction from GaN-based scintillator using MOVPE

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