Optimization of thermoelectric power factor of (013)-oriented Ag2Se films via thermal annealing

Advances in Ag2Se-based thermoelectrics from materials to applications

“…Moreover, physical vapor deposition methods and vacuum thermal evaporation (VTE) technologies are widely used in fabricating Ag 2 Se-based films, especially VTE techniques that can deposit highly textured Ag 2 Se films. 152,153,241 Here, we introduce two typical cases of Ag 2 Se-based films with highly oriented grains. The single-phase Ag 1.8 Se film with highly preferred grain growth along the c -axis was deposited on a PI substrate, exhibiting a high μ of ∼1168 cm 2 V −1 s −1 at room temperature, higher than that of most Ag 2 Se-based films.…”

Flexible power generators by Ag2Se thin films with record-high thermoelectric performance

“…Benefiting from these novel strategies, high ZT s of ~1 have been achieved. To enhance the flexibility of the thin film, flexible substrates or supporters are usually needed, such as polyimide (PI) 9 , 10 , 19 , 20 , Nylon 12 – 17 , 21 – 25 , scaffold 26 , flexible glass 18 , 27 – 29 , polyethylene terephthalate (PET) 11 , and paper 30 . However, further enhancing its thermoelectric performance and flexibility remains an ongoing goal.…”

Tuning the nonlinear susceptibility and linear parameters upon annealing Ag60−xSe40Texnanostructured films for nonlinear and photonic applications

“…Ag x (Se 80 Te 20 ) 100x ultra-thin films prepared through thermal evaporation and annealed below the glass transition temperature (328 K) show the structural transformation with enhanced bandgap upon increase in doping concentration [28] . For some chalcogenide thin films, the annealing effect at various temperatures has showed an increase in conductivity due to the tunnelling of carriers in the localized states [29] . Some of the Te-based materials doped with magnetic materials show diverse properties after thermal treatment [30] .…”

“…28 For some chalcogenide thin films, the annealing effect at various temperatures has showed an increase in conductivity due to the tunnelling of carriers in the localized states. 29 Some of the Te-based materials doped with magnetic materials show diverse properties after a thermal treatment. 30 For Ge–Fe–Te chalcogenide semiconductor thin films, the annealing process induced a phase transition in their magnetic behaviour by changing their crystal structure and a decrease in the transparency of the film.…”