Optimized conditions for an enhanced coupling rate between Er ions and Si nanoclusters for an improved 1.54-μm emission

Gourbilleau, Fabrice; Levalois, M.; Dufour, Christian; Vicens, J.; Rizk, R.

doi:10.1063/1.1655680

Cited by 102 publications

(90 citation statements)

References 22 publications

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“…For all samples, no signal of Er 3þ ions at 1.54 mm has been detected, evidencing a quenching of the luminescence as usually observed for high doping level of silicon rich silica and high temperature annealing [8,17,21]. Fig.…”

Section: Photoluminescence Analysismentioning

confidence: 87%

“…The loss of luminescence of Er ions in Er-doped SiO X materials at high temperature (>1000 + C) has been very frequently observed in the literature [17,20]. This quenching is generally attributed to the precipitation of Er ions and the formation of phases such as erbium oxides [7].…”

Section: Elementary Distribution Of Atomsmentioning

confidence: 96%

“…However, the study of the nanoscale structure of these systems has only been slightly studied [8,21,22] and consequently the precipitation mechanism of the Er ions in SRSO remains very poorly understood. Hence, our samples were subjected to 1 h heat treatment at 1100 + C, a temperature for which Si-ncs in silica should be formed [12] and thus be able to sensitize efficiently the Er ions [17].…”

Section: Elementary Distribution Of Atomsmentioning

confidence: 99%

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On the interplay between Si-Er-O segregation and erbium silicate (Er2Si2O7) formation in Er-doped SiOx thin films

Beainy

Frilay

Pareige

et al. 2018

Journal of Alloys and Compounds

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. On the interplay between Si-Er-O segregation and erbium silicate (Er 2 Si 2 O 7 ) formation in Er-doped SiO x thin films. Journal of Alloys and Compounds, Elsevier, 2018, 755, pp.55 -60 a b s t r a c tEr-doped silica or rich-silicon oxide has been widely studied as 1.54 mm emitters. The incorporation of Sinanoclusters is known for improving luminescence yield of Er 3þ ions through an efficient sensitization of the neighboring rare earth ions. The aim of this work is to investigate the influence of Silicon excess and Erbium concentration on the formation of silicon nanoclusters and Er-rich phase responsible of the quenching of 1.54 mm emission. Atom probe tomography and photoluminescence spectroscopy were used to explore the nanostructure and optical activity of Er-doped silicon rich silica. We present a direct evidence that both silicon excess and Er concentration influence the growth of Si nanoclusters, the formation of Er-Si-O phase and the luminescence of both Si nanoclusters and Er 3þ ions. We explain these finding in relation with the growth mechanism of nanoparticles and the presence of a Snowman-like Janus morphology between silicon and Erbium silicates nanoparticles. In this contribution, we deciphered the nanoscale structure spatial correlations between Er and Si atoms in Er doped SiO X which remained unclear for a long time.

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Section: Photoluminescence Analysismentioning

confidence: 87%

Section: Elementary Distribution Of Atomsmentioning

confidence: 96%

Section: Elementary Distribution Of Atomsmentioning

confidence: 99%

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On the interplay between Si-Er-O segregation and erbium silicate (Er2Si2O7) formation in Er-doped SiOx thin films

Beainy

Frilay

Pareige

et al. 2018

Journal of Alloys and Compounds

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“…The fabrication process appears, therefore, as a crucial step regarding the distance-dependent interactions between the Er 3+ ions and the Si-based sensitizers. [4][5][6][7][8] It is then essential to nanoengineer the density and distribution of both Er 3+ ions and Si-based sensitizers within the silica matrix. In this regard, several groups have analyzed the influence of different annealing treatments on the optical performance of SRSO:Er layers [9][10][11][12][13] usually deposited at room temperature ͑RT͒ before being subsequently annealed at different temperatures.…”

Section: Efficient Energy Transfer From Si-nanoclusters To Er Ions Inmentioning

confidence: 99%

Efficient energy transfer from Si-nanoclusters to Er ions in silica induced by substrate heating during deposition

Cueff

Labbé

Cardin

et al. 2010

Journal of Applied Physics

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Articles you may be interested inResonant structures based on amorphous silicon suboxide doped with Er 3 + with silicon nanoclusters for an efficient emission at 1550 nm J. Vac. Sci. Technol. B 27, L38 (2009) This study investigates the influence of the deposition temperature T d on the Si-mediated excitation of Er ions within silicon-rich silicon oxide layers obtained by magnetron cosputtering. For T d exceeding 200°C, an efficient indirect excitation of Er ions is observed for all as-deposited samples. The photoluminescence intensity improves gradually up to a maximum at T d = 600°C before decreasing for higher T d values. The effects of this "growth-induced annealing" are compared to those resulting from the same thermal budget used for the "classical" approach of postdeposition annealing performed after a room temperature deposition. It is demonstrated that the former approach is highly beneficial, not only in terms of saving time but also in the fourfold enhancement of the Er photoluminescence efficiency.

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“…2 More recently, the framing of this problem has become complicated by findings that strong Er PL can be sensitized not just with Si nanocrystals, but also by an amorphous silicon network in which no distinct Si nanocrystals exist. 6 To date, no compelling explanation has been able to account satisfactorily for all these observations in a consistent manner. For example, a plausible explanation that most ͑over 90%͒ of the Er ions in the material may be optically inactive or quenched, and therefore nonluminescent, appears at odds with the ability of these ions to be excited at high power, after the initial Er PL saturation has occurred.…”

mentioning

confidence: 99%

Er 3 + excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx

Otón

Loh

Kenyon

2006

Applied Physics Letters

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Despite the observation by a number of groups of a strong luminescence sensitization effect of erbium ions by excitation exchange from silicon nanoclusters, there is considerable experimental evidence that the fraction of Er ions excited by Si-nc is actually very low for much of the material reported. In this work, we examine the evidence and point out that Er excited state absorption is the likely cause. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2227637͔In recent years, silicon nanocluster-sensitized Er-doped materials have generated great interest, as it has been demonstrated that silicon nanoclusters ͑Si-nc͒ can transfer their energy very effectively to the Er ions surrounding them. The attraction of this indirect excitation is twofold: ͑i͒ the excitation cross section of the Si-nc is at least four orders of magnitude greater than that of rare earths in silica and ͑ii͒ the broadband absorption spectrum of the Si-nc allows pumping with sources such as light-emitting diodes ͑LEDs͒. The latter would dramatically lower the cost of Er-doped amplifiers, and allow pumping geometries such as top-down nonguided pumping, which would enable easy integration of amplifiers in planar optical circuits. However, no lasing action has been achieved to date. Indeed, there is cumulating evidence that, for much of the material that has been reported, the fraction of Er ions that can be excited by Si-nc is actually very low-of the order of a few percent or less. Clearly, this issue will need to be understood and resolved in order for viable lasers and amplifiers to be realized from this material system.There is now documented evidence from multiple groups, although it may not always have been explicitly recognized, that the fraction of Er ions that are excitable by Si-ncs is often quite low. 1,2 For example, for the data presented by Fujii et al., 1 the Er photoluminescence ͑PL͒ for two samples with the same Er concentration, one of which contained Si-nc ͓silicon-rich oxide ͑SRO͔͒ and the other without ͑SiO 2 ͒, was reported to differ by a factor of 30 under the same pumping conditions ͑see Fig. 1͒. It is straightforward to show by rate equation analysis that the Er excited state populations are given bywhere is the Er pump absorption cross section, the Er luminescence lifetime, P the pump flux, N Er the Er ion concentration, k the Si-nc to Er excitation transfer coefficient, and n b is the Si-nc excited state population. At the maximum pump power reported ͑1.5 W / cm 2 ͒, the SRO sample is in the saturation regime while the SiO 2 sample is still in the linear regime; therefore the ratio of the number of excited Er ions in the two samples can be simply estimated asTaking 488 nm ϳ 10 −20 cm 2 , = 10 ms, and P =4 ϫ 10 18 cm 2 s −1 ͑corresponding to 1.5 W / cm 2 ͒, this yields an Er concentration ratio of 2000. As the experimentally observed PL ratio is only 30, this indicates that just 1.5% of the available Er ions in the SRO sample have been excited. This conclusion seems surprising considering that, for the volume frac...

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Optimized conditions for an enhanced coupling rate between Er ions and Si nanoclusters for an improved 1.54-μm emission

Cited by 102 publications

References 22 publications

On the interplay between Si-Er-O segregation and erbium silicate (Er2Si2O7) formation in Er-doped SiOx thin films

On the interplay between Si-Er-O segregation and erbium silicate (Er2Si2O7) formation in Er-doped SiOx thin films

Efficient energy transfer from Si-nanoclusters to Er ions in silica induced by substrate heating during deposition

Er 3 + excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx

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