Abstract:We propose criteria for recess etching to fabricate T-gate used in
InGaAs HEMTs. By patterning additional rectangular pads on the source
and drain metals in the e-beam lithography step, it is possible to
measure the drain-to-source resistance (R) and
current (I). the ratio (Γ) of before and after
etching for each R and
I can be used as criteria to determine the
point in time to stop etching. By performing recess etching with Γ= 1.97
for R and Γ= 0.38 for
I on an epiwafer having cap doping
concentration of 2= 1… Show more
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