Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy

Vidhya, R.; Feenstra, R. M.; Sarney, Wendy L.; Salamanca‐Riba, L.; Greve, David W.

doi:10.1116/1.582445

Cited by 22 publications

(6 citation statements)

References 13 publications

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“…20 The diffraction pattern contains information about the structure of the crystalline material, which indicates here that the PZT thin film is highly textured in the (001) orientation. 21 There was no trace of a secondary phase due to PbO volatilization, and a single tetragonal phase PZT formed. Figure 1d shows the rocking curve of the PZT thin film.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Epitaxial PZT Film-Based Ferroelectric Field-Effect Transistors for Artificial Synapse

Lee

Park

et al. 2023

ACS Appl. Electron. Mater.

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Neuromorphic computing systems that mimic the human brain have recently attracted substantial attention because they allow for the efficient processing of large amounts of data. These systems are composed of neurons and synapses to transfer information; synapses play a particularly important role in transmitting and integrating processed signals between the neurons. The ferroelectric field-effect transistors (FeFETs) can meet the required properties of artificial synaptic devices because the channel current can be controlled with changes in applied gate voltage due to two stable polarization states, meaning that the data can be memorized in various states. In this study, the epitaxial Pb(Zr0.20Ti0.80)O3 (PZT) film was grown on La0.67Sr0.33MnO3 (LSMO) buffered SrTiO3 (STO) single crystal substrate using pulsed laser deposition (PLD). As the channel layer, the amorphous indium gallium zinc oxide (a-IGZO) was employed due to its large carrier mobility and good uniformity. The epitaxially grown single-crystal PZT thin film has a residual polarization (P r) value of 20.2 μC/cm2 and the a-IGZO thin film transistor has a carrier mobility of 10.23 cm2/V s. The biological synaptic behaviors were emulated using the fabricated FeFETs based on the PZT and a-IGZO thin film as a gate insulator and channel material, respectively. The synaptic plasticity was analyzed according to the applied voltage pulse condition. The calculated nonlinearity values were 0.00 and 5.41 with 16 pulse numbers and 0.51 and 7.05 with 32 pulse numbers for potentiation and depression, respectively.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Epitaxial PZT Film-Based Ferroelectric Field-Effect Transistors for Artificial Synapse

Lee

Park

et al. 2023

ACS Appl. Electron. Mater.

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“…Due to the lack of a native substrate, GaN is mostly grown on foreign substrates, such as AlN, 53 Si, 54 sapphire, 55 and SiC. 56 The mismatch between the two layers results in a high density of threading dislocations in the GaN epilayer, which includes pure edge, pure screw, and mixed dislocations. These dislocations have a significant effect on the device behavior.…”

Section: B Gan Growthmentioning

confidence: 99%

Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by 14N(n,p)14C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

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“…Early work [1] asserted that N-rich conditions led to three-dimensional, columnar growth and low electron mobilities [2]. Some research has concluded that growth must be done with the fluxes set to obtain films as close to the stochiometric condition as possible [3], while others maintain that it must be done in the 'intermediate range' (Ga-rich but just short of droplet formation) [4,5]. In any case the window for obtaining Ga rich films without inducing Ga droplet formation is small, and precise determination of the 1:1 condition is important.…”

Section: Introductionmentioning

confidence: 97%

Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy

Svensson

Sarney

et al. 2015

Journal of Crystal Growth

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Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy

Cited by 22 publications

References 13 publications

Epitaxial PZT Film-Based Ferroelectric Field-Effect Transistors for Artificial Synapse

Epitaxial PZT Film-Based Ferroelectric Field-Effect Transistors for Artificial Synapse

Review of using gallium nitride for ionizing radiation detection

Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy

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