Optimizing GaSb and GaSb(001) surfaces for epitaxial film growth

Solomon, J. S.; Petry, Leanne; Tomich, D. H.

doi:10.1016/s0040-6090(98)01704-0

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Oxide Desorption Conditions1

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2010

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Cited by 3 publications

(2 citation statements)

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“…Despite the availability of ''epi-ready'' GaSb substrates, further treating wafers chemically [11,12] to reduce oxide thickness and/or with ultraviolet radiation/ozone to facilitate carbon removal has proven beneficial [13][14][15]. Proper baking of the MBE system and outgassing of the gallium cell reduces Ga-oxides in the source material, another major source of surface defects [16].…”

Section: Introductionmentioning

confidence: 99%

Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux

Koerperick

Murray

Norton

et al. 2010

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux

Koerperick

Murray

Norton

et al. 2010

Journal of Crystal Growth

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“…Surface atoms are consumed during the desorption process, thus excessively thick oxide layers may cause roughening or leave the surface non-stoichiometric. Treating the substrate with a UV-ozone process prior to growth has been shown to substantially reduce carbon at the surface of the wafer, a major source of contamination in MBE grown material [66,67]. In this technique contaminants are removed from the wafer surface and oxide re-growth is encouraged by the UV-ozone exposure.…”

Section: Oxide Desorption Conditionsmentioning

confidence: 99%

High power mid-wave and long-wave infrared light emitting diodes

Koerperick¹

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High brightness light emitting diodes based on the InAs/GaSb superlattice material system have been developed for use in mid-wave and long-wave infrared optoelectronic systems. By employing a multiple-active region device configuration, high optical output has been demonstrated from devices in the 3-5 µm and 7-12 µm spectral bands. Mid-wave infrared optical output in excess of 0.95 mW/sr has been observed from 120×120 µm 2 devices with peak emission at 3.8 µm, and nearly 160 µW/sr has been measured from devices of the same size operating at 8 µm. Larger devices (1×1 mm 2) with output as high as 8.5 mW/sr and 1.6 mW/sr have been demonstrated with midwave and long-wave devices, respectively, under quasi-DC bias conditions. in the tunnel junctions.

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