Optimizing high voltage bipolar transistors in a smart-power complementary BiCMOS technology

Ryter, R.; Zingg, R.P.; Fichtner, W.

doi:10.1016/0038-1101(95)00416-5

Cited by 4 publications

(1 citation statement)

References 11 publications

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“…Thin film lateral bipolar transistors (LBTs) on silicon‐on‐insulator (SOI) (Baliga, 1991; Huang and Baliga, 1991; Kumar and Roulston, 1994; Ryter et al , 1996; Garner et al , 2001) have drawn wide attention in the recent past due to their compatibility with BiCMOS technology and possibility of integration in smart power ICs. This is particularly true for applications in medium voltage range (100‐1,000 V) such as display driver or ballast circuits where high voltages LBTs are often used (Nagata et al , 1992; Arborg and Litwin, 1995; Gomez et al , 2000).…”

Section: Introductionmentioning

confidence: 99%

Realizing high‐voltage thin film lateral bipolar transistors on SOI with a collector‐tub

Roy

Kumar

2005

Microelectronics International

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Purpose-The main purpose of this paper is to find a simple method to improve the breakdown voltage of BJTs fabricated on SOI. Design/methodology/approach-We have used two-dimensional device simulation to examine the effect of a collector tub on the collector breakdown of the SOI based BJTs. This method involves creating a collector tub by etching the buried oxide followed by an n-type implantation on the collector n/n þ junction side. Findings-First, our method reduces the peak electric field at the silicon film-BOX interface and secondly, the collector-tub facilitates the collector potential to be absorbed by both collector drift and substrate regions improving the collector breakdown significantly. Practical implications-An improved breakdown voltage improves the reliability of BJTs on SOI. Originality/value-Our results show that the BV CEO of the bipolar transistors with a collector-tub is enhanced by 2.7 times when compared with a conventional lateral bipolar transistor (LBT) with identical drift region doping. This improvement has an important practical value in the fabrication of SOI-based LBTs.

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Section: Introductionmentioning

confidence: 99%

Realizing high‐voltage thin film lateral bipolar transistors on SOI with a collector‐tub

Roy

Kumar

2005

Microelectronics International

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Needs and applications of high temperature LSIs for automotive electronic systems

Hattori

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372)

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Ahstrrlct.'ioyota has dcvclopcd ii lot of lSIs for iin autmotive iippliciitioti. t ligti pcrlormiincc ISIs usctl in :iritarnotivc clcctrtmic systcms arc kcy cornpotwits to iicllicve the high output powcr, thc Inw fucl criiisunipiiori :tiid tlic clcan cxhntisi g:is. l t i c design of Ihc ncxt gciicr:ition :~iitcmihilc rcqtiircs for high pcriorniancc initonioiivc clcctroriir: sysicnis. I n this papcr wc dcscrihc nectls and ;ipplic:hons of' hiEli tcnipcretiirc I S I S for tiutmiiotivc clcctrnnic systems. 1Jspcci:illy wc fucus on tlic ncwly dcvclopcd SO1 l K M O S I S 1 and the itilclligcnt powcr dcvicc. Wc ;dso rlcscrihc ;in cxiimplc of tlic high iiitcgr:ilioii LS1, whicli hiis %bit microprocessor, progratii/datii mcniorics, :i 10-bit prccision N D cunverkr, niidog circuits for scnsor sigii;il proccssing find ;I knock coiitrol systcm, scrisl communic:ition intcrfaccs, mtl gcneral 110 ports. This IS1 IliIs dcsigiicrl for 4/b-cylintlcr cngitic coiitr[)l untlcr autnniutivc high operat ion tcmperalurc condition.-- . Iritrorluction

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A powertrain control SOI BiCMOS LSI for an automotive application

Hattori

Kuromiya²,

Itoh³

1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199)

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Optimizing high voltage bipolar transistors in a smart-power complementary BiCMOS technology

Cited by 4 publications

References 11 publications

Realizing high‐voltage thin film lateral bipolar transistors on SOI with a collector‐tub

Realizing high‐voltage thin film lateral bipolar transistors on SOI with a collector‐tub

Needs and applications of high temperature LSIs for automotive electronic systems

A powertrain control SOI BiCMOS LSI for an automotive application

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