Optimizing the growth procedures for CdSe crystal by thermal analysis techniques

Large-size high-quality CdSe-OPO component for far IR laser output prepared by directional crystal growth technique

“…Control of stoichiometric proportion is key to growing high quality CdSe crystals. Different vapor pressures of Cd and Se decomposed from the CdSe melt usually result in a compositional deviation from the stoichiometry, 25 leading to high-density defects. In order to suppress the volatilization of the components, a high pressure vertical Bridgman (HPVB) technique was developed to grow A II –B VI semiconductors, such as CdSe, ZnSe, and ZnTe.…”

Preparation and characterization of quarter-wave plate at 12.4 μm based on CdSe single crystal

“…[15,16]. Compared with those mid-infrared materials, CdSe single crystal could meet the demand of birefringence wave plate better benefiting from its' wide infrared transparent band (0.750∼25 μm), high infrared transmittance and appropriate birefringence coefficient (∆n 0.017 = ) [15,[17][18][19][20], It is an excellent material for the preparation of mid-infrared polarization wave plates. Despite all these advantages, however, large size and high quality CdSe single crystal is also difficulty to obtain, therefore, the large size and high quality crystal growth method is strongly desired.…”

Structural quality in single crystalline CdSe ingots grown by PVT

“…Thermal, mechanical and chemical stability are important properties of this semiconductor which additionally might not suffer from polarization under applied electric fields [6,7]. In order to obtain a good quality single crystalline material, it is necessary to optimize growth conditions, to advance in the knowledge and understanding involved in the mass transfer processes and in the diffusive and convective effects [8,9]. Detectors and optical devices quality of different semiconductors critically depend on the material characteristics [10].…”