Optimizing UV detection properties of n-ZnO nanowire/p-Si heterojunction photodetectors by using a porous substrate

Keramatnejad, Kamran; Khorramshahi, Fatemeh; Khatami, Saeid; Asl-Soleimani, Ebrahim

doi:10.1007/s11082-014-0032-y

Cited by 20 publications

(11 citation statements)

References 30 publications

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“…The relationship between the illumination intensity and illumination power density is shown in Table S1 in the Supporting Information. The responsivities of the CdS photodetector are shown in Figure a, and the comparison diagram of the responsivities in this work and other reported photodetectors such as CdS, ZnO, and CdSe based photodetectors for various wavelength are shown in Figure b …”

Section: Resultsmentioning

confidence: 63%

Single CdS Nanorod for High Responsivity UV–Visible Photodetector

Zhao

Liu

et al. 2017

Advanced Optical Materials

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light absorption, [3] as well as the unique optoelectronic properties. [4][5][6][7] Therefore, many researchers are devoted to synthesize various of 1D nanostructures with controllable size, morphology, orientation, and crystallinity. Until now, various 1D nonostructures including nanorods (NRs), nanowires, nanotubes, and nanobelts [4,5,8,9] have been synthesized by many approaches such as chemical vapor deposition (CVD), focused ion beam, vapor-liquid-solid and chemical solutions. [10][11][12][13] Among 1D nanomaterials, 1D nanostructured semiconductor exhibited extensive application in light-emitting diode, transistors, lasers, solar cells, panel displays, field emitters, and photodetector devices. [4,12,14,15] As one of the most important optoelectronic devices, photodetectors can be used to convert the optical signal into electrical signal. Generally, the photodetectors based on 1D nanostructures show high sensitivity, large photocurrent gain, good reliability, and fast response time. [11,16,17] As we know, various 1D semiconductor nanomaterials have been used to fabricate photodetectors such as CdS, ZnO, ZnS, SnO 2 , WS 2 , CdTe, ZnTe, and In 2 Te 3 . [4,[18][19][20][21][22] It has been concluded that the photoresponse properties of these fabricated detectors are determined critically by a variety of parameters including selected materials, contact type of device, as well as the crystalline quality and dimension.As a significant II-VI chalcogenide semiconductor, wurtzite CdS is a direct bandgap semiconductor with the band energy of 2.42 eV at room temperature. [23] The particular characteristics of CdS such as excellent photoconductivity, good chemical stability, low work function (4.2 eV), and the working in visible spectrum, [24] make CdS become a promising candidate in photodetectors. [25] In recent years, many efforts have been used to improve the performance of the CdS photodetector with the novel type of device structure such as side-gated field-effect transistor. [26,27] While, in the area of the traditional Ohmic contact based photodetectors, many efforts still have been dedicated to improve the quantum efficiency, photoresponse ratio, sensitivity, and response time of 1D CdS nanowires photodetectors. [28][29][30] However, less attention has been paid to improve the responsivity of CdS nanwires photodetector despite it is the important parameter to evaluate the device performance such as the ability of the photoelectric conversion.1D nanoscale photodetectors have been extensively investigated for the unique geometry structure and novel physical and chemical properties. The 1D CdS materials have received much attention in the field due to its high photosensitivity and fast response, while how to achieve high responsivity is still in development, despite it is the crucial target to the excellent photo detector. Single crystal CdS nanorods (NRs) are synthesized on SiO 2 /Si substrate over large scale via the chemical vapor deposition method. The individual single CdS nanorod photodetector have been fabr...

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Section: Resultsmentioning

confidence: 63%

Single CdS Nanorod for High Responsivity UV–Visible Photodetector

Zhao

Liu

et al. 2017

Advanced Optical Materials

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“…Most ZnO-based optoelectronic devices rely on heterojunctions between n-type ZnO and p-type semiconducting materials, the most common choice being p-type silicon. Heterojunction n-ZnO/p-Si devices have been employed as UV visible photodetectors [ 18 ], solar cells [ 19 , 20 , 21 ], and LEDs [ 22 ].…”

Section: Introductionmentioning

confidence: 99%

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

Chang

2016

Materials

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Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current−voltage (I−V) measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

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“…Improving the interfacial carrier transport after the laser‐assisted nanowelding process reduced the chances of scattering or recombination of the photoexcited carriers that occur mostly at the contacts, due to the weak G–M coupling and strong contact barrier . In addition, the photoelectric mechanism leads to a faster optical response time, compared to the thermoelectric effect that is reported to be mainly responsible in weakly coupled junctions . Therefore, the fourfold amplification of the photocurrent obtained through our laser‐assisted nanowelding method creates an opportunity for fabrication of highly responsive photodetectors.…”

Section: Laser‐assisted Nanowelding Of Suspended Graphene Photodetectorsmentioning

confidence: 94%

Laser‐Assisted Nanowelding of Graphene to Metals: An Optical Approach toward Ultralow Contact Resistance

Keramatnejad

Zhou

et al. 2017

Adv Materials Inter

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The electrical performance of graphene‐based devices is largely limited by substantial contact resistance at the heterodimensional graphene–metal junctions. A laser‐assisted nanowelding technique is developed to reduce graphene–metal (G–M) contact resistance and improve carrier injection in suspended graphene devices. Selective breakdown of CC bonds and formation of structural defects are realized through laser irradiation at the edges of graphene within the G–M contact regions in order to increase the chemical reactivity of graphene, facilitate G–M bonding, and, therefore, maximize interfacial carrier transportation. Through this method, significantly reduced G–M contact resistances, as low as 2.57 Ω µm are obtained. In addition, it is demonstrated that the location of laser‐induced defects within the contact areas significantly impacts the interfacial properties and the carrier mobility of graphene devices. A fourfold increase in photocurrent is observed in the suspended graphene photodetectors with treated G–M interfaces as compared to ordinary ones. This contact‐free and position‐selective technique minimizes the degradation of the graphene channels and maintains the superior performance of graphene devices, making it a promising approach for reducing G–M resistance in the fabrication of graphene‐based devices.

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Optimizing UV detection properties of n-ZnO nanowire/p-Si heterojunction photodetectors by using a porous substrate

Cited by 20 publications

References 30 publications

Single CdS Nanorod for High Responsivity UV–Visible Photodetector

Single CdS Nanorod for High Responsivity UV–Visible Photodetector

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

Laser‐Assisted Nanowelding of Graphene to Metals: An Optical Approach toward Ultralow Contact Resistance

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