Optimum bias of CMOS organic field effect transistor inverter through threshold adjustment of both p- and n-type devices

Dhar, Bal Mukund; Ozgun, Recep; Jung, Bernhard; Katz, Howard E.; Andreou, Andreas G.

doi:10.1049/el.2010.1603

Cited by 6 publications

(5 citation statements)

References 14 publications

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“…Furthermore, we quantify the releasable static charge using thermally stimulated discharge current (TSDC). The pentacene-PS interface is analogous to those with which we had previously realized V t -shifted OFETs and complementary circuits, 10 and operates as such in the present case as well.…”

supporting

confidence: 61%

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Kelvin probe microscopic visualization of charge storage at polystyrene interfaces with pentacene and gold

Dawidczyk

Johns

Ozgun

et al. 2012

Applied Physics Letters

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Charge carriers trapped in polystyrene (PS) were investigated with Kelvin probe microscopy (KPM) and thermally stimulated discharge current (TSDC). Lateral heterojunctions of pentacene/PS were scanned using KPM, effectively observing polarization along a side view of a lateral nonvolatile organic field-effect transistor dielectric interface. TSDC was used to observe charge migration out of PS films and to estimate the trap energy level inside the PS, using the initial rise method.

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supporting

confidence: 61%

“…This is consistent with charging occurring in the PS away from the interface. This interface should resemble vertical device interfaces, 10 in that any pentacene molecules on the edge of the PS should be oriented with the long axis normal to that edge, 14 regardless of its exact orientation.…”

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confidence: 99%

Kelvin probe microscopic visualization of charge storage at polystyrene interfaces with pentacene and gold

Dawidczyk

Johns

Ozgun

et al. 2012

Applied Physics Letters

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“…To design circuits containing OFETs more effectively, the threshold voltage (V T ) should be precisely tuned. 7 Means of shifting V T include dipolar monolayers 8,9 or chromophores 10 at the OSCÀdielectric interface, electrostatic charging of the dielectric, 11 charging of an interface within the gate material, 12 and ferroelectric materials. 13 An additional V T shift in OFETs is routinely observed during normal device operation, a phenomenon known as bias stress.…”

mentioning

confidence: 99%

“…Organic field-effect transistors (OFETs) are an emerging technology that allows for flexible devices with cheaper processing costs for a variety of applications. , OFETs are now being considered for active matrix backplanes, radiofrequency identification (RFID) tags, and chemical and biological sensing. To design circuits containing OFETs more effectively, the threshold voltage ( V T ) should be precisely tuned . Means of shifting V T include dipolar monolayers , or chromophores at the OSC–dielectric interface, electrostatic charging of the dielectric, charging of an interface within the gate material, and ferroelectric materials …”

mentioning

confidence: 99%

Visualizing and Quantifying Charge Distributions Correlated to Threshold Voltage Shifts in Lateral Organic Transistors

et al. 2014

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Lateral organic field-effect transistors (OFETs), consisting of a polystyrene (PS) polymer gate material and a pentacene organic semiconductor (OSC), were electrically polarized from bias stress during operation or in a separate charging step, and investigated with scanning Kelvin probe microscopy (SKPM) and current-voltage determinations. The charge storage inside the polymer was indicated, without any alteration of the OFET, as a surface voltage with SKPM, and correlated to a threshold voltage (VT) shift in the transistor operation. The SKPM method allows the gate material/OSC interface of the OFET to be visualized and the surface voltage variation between the two gate material interfaces to be mapped. The charge distribution for three samples was derived from the surface voltage maps using Poisson's equation. Charge densities calculated this way agreed with those derived from the VT shifts and the lateral gate-OSC capacitance. We also compared the behavior of two other polymers with PS: PS accepted the most static charge in its entire volume, poly(2-trifluoromethylstyrene) (F-PS) had the most stability to bias stress, and poly(methyl methacrylate) (PMMA) showed the most leakage current and least consistent response to static charging of the three polymers. This work provides a clear demonstration that surface voltage on a working OFET gate material can be related to the quantity of static charge responsible for bias stress and nonvolatility in OFETs.

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“…Clearly, when the materials are better matched in mobility and threshold voltage, the switching occurs closer to the half‐way point between zero and V dd . This idea is the basis of our previous work using individual OFET threshold‐voltage tuning through charged dielectrics to shift the switching voltage 18, 19. Analytes can affect the switching voltage of inverters made from sensitive semiconductors by changing the threshold voltages and/or mobilities of either or both semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors

et al. 2011

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Chemiresistors and sensitive OFETs have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Here we report higher order logic circuits utilizing OFETs sensitive to amine vapors. The circuits depend on the synergistic responses of paired p- and n-channel organic semiconductors, including an unprecedented analyte-induced current increase by the n-channel semiconductor. This represents the first step towards ‘intelligent sensors’ that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.

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Optimum bias of CMOS organic field effect transistor inverter through threshold adjustment of both p- and n-type devices

Cited by 6 publications

References 14 publications

Kelvin probe microscopic visualization of charge storage at polystyrene interfaces with pentacene and gold

Kelvin probe microscopic visualization of charge storage at polystyrene interfaces with pentacene and gold

Visualizing and Quantifying Charge Distributions Correlated to Threshold Voltage Shifts in Lateral Organic Transistors

Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors

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