Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process

Hatakeyama, Tatsuko; Kushibe, Mitsuhiro; Watanabe, T.; Imai, Seiji; Sügimura, Takashi

doi:10.4028/www.scientific.net/msf.433-436.831

Cited by 33 publications

(16 citation statements)

References 2 publications

(3 reference statements)

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“…However, there is no consensus in literature on the model describing the reverse characteristics of 4H-SiC Schottky diodes. In fact, while some papers use the classical TFE model [34,42], whose validity depends on doping concentration and bias range [43], other works include the image force lowering effect in the TFE model to fit the experimental data [37,44].…”

Section: Resultsmentioning

confidence: 99%

Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC

Vivona

Greco

Bellocchi

et al. 2020

J. Phys. D: Appl. Phys.

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In this paper, the electrical behavior of tungsten carbide (WC) Schottky barrier on 4H-SiC was investigated. First, a statistical current-voltage (I–V) analysis in forward bias, performed on a set of equivalent diodes, showed a symmetric Gaussian-like distribution of the barrier heights after annealing at 700 °C, where a low Schottky barrier height (ΦB = 1.05 eV) and an ideality factor n = 1.06 were measured. The low value of the barrier height makes such a WC contact an interesting candidate to reduce the conduction losses in 4H-SiC Schottky diodes. A deeper characterization has been carried out, by monitoring the temperature dependence of the I–V characteristics and the behavior of the relevant parameters ΦB and n. The increase of the barrier height and decrease of the ideality factor with increasing temperature indicated a lateral inhomogeneity of the WC/4H-SiC Schottky contact, which was described by invoking Tung’s model. Interestingly, the temperature dependence of the leakage current under reverse bias could be described by considering in the thermionic field emission model the temperature dependent barrier height related to the inhomogeneity. These results can be useful to predict the behavior of WC/4H-SiC Schottky diodes under operative conditions.

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Section: Resultsmentioning

confidence: 99%

Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC

Vivona

Greco

Bellocchi

et al. 2020

J. Phys. D: Appl. Phys.

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“…In order to describe the experimental reverse characteristics I-V of SiC SBDs, several authors used the general model [6] of the tunneling current with [7][8][9][10][11] and without [5] the inclusion of the image force barrier lowering (IFBL). However, several authors [12][13][14][15][16][17] showed that the thermionic field emission (TFE) theory developed by Padovani-Stratton [18] can be used to describe the experimental reverse characteristics of SiC and other wide bandgap SBDs with and without the IFBL. Ivanov et al [19,20] and Lee et al [21] concluded that the thermionic emission model combined with the barrier lowering model is appropriate to describe the reverse characteristics I-V.…”

Section: Introductionmentioning

confidence: 99%

Conduction mechanisms of the reverse leakage current of 4H-SiC Schottky barrier diodes

Latreche¹

2019

Semicond. Sci. Technol.

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A new numerical method for determining the reverse transition voltage between thermionic and tunneling mechanisms has been performed for 4H-SiC Schottky barrier diodes. The idea of this method is based on equality between thermionic emission and the tunneling process and both are combined with the barrier lowering model. Application of this method shows a strong discrepancy between our results and those deduced from Padovani-Stratton conditions. The reverse transition voltage versus the temperature plot exhibits an unexpected peak at low temperatures which means that the thermionic emission mechanism predominates at low temperatures. The reverse transition voltage increases linearly with the increase in barrier height, the effective mass and the inverse of doping concentration. In order to predict the reverse transition voltage as a function of temperature, doping concentration and barrier height for a 4H-SiC Schottky barrier diode, an analytical model has been proposed.

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“…Combined and not combined with barrier lowering model, some authors [6][7][8][9][10][11] described the reverse leakage current using the general model [12] of the tunneling current. At the same time, the others [13][14][15][16][17][18] used the thermionic field emission (TFE) developed by Padovani-Stratton [19] also with and without the effect of the image force barrier lowering. However, some researchers [20][21][22] used thermionic emission model in combination with the barrier lowering one to describe the experimental reverse characteristics data.…”

Section: Introductionmentioning

confidence: 99%

Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes

Latreche¹

2019

Semicond. Phys. Quantum Electron. and Optoelectron.

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A new method to analyze reverse characteristics of 4H-SiC Schottky barrier diode has been presented in this paper. The model incorporates both the current induced by the tunneling of carriers through the Schottky barrier and that induced by the thermionic emission of carriers across the metal-semiconductor interface. The treatment includes the effect of image force lowering both the thermionic emission and electron tunneling processes. This analysis allowed us to separate and identify the thermionic emission and tunneling components of the total current. The experimental reverse transition voltage between thermionic emission and tunneling process can be determined from the intersection of the two components by using two models; bias dependence and no bias dependence of barrier height. For high temperatures, the experimental reverse transition voltage increases with increasing the temperature and decreases with increasing the doping concentration as predicted by Latreche's model.

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Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process

Cited by 33 publications

References 2 publications

Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC

Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC

Conduction mechanisms of the reverse leakage current of 4H-SiC Schottky barrier diodes

Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes

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