Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction

Abbasian, Sobhan; Sabbaghi‐Nadooshan, Reza

doi:10.1007/s11664-018-6203-z

Cited by 4 publications

(1 citation statement)

References 15 publications

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“…It consists of incorporating a second BSF top layer into the structure of the tandem solar cell. By doing so, an additional field near to junction is created and is expected to lead to better absorption of the photons [24]. Previous studies [25-26] provide further evidence of the positive impact of adding a second BSF layer when designing a multijunction structure.…”

Section: Structure Of the Tandem Ingap/si Djscmentioning

confidence: 93%

Design and optimisation of two-terminal InGaP/Si tandem solar cell through numerical simulation

Kharchich,

Khamlichi

2023

Preprint

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The two-terminal III-V/Si double junction solar cells were recognized to achieve comparable performance with lower cost of fabrication than the III-V/III-V tandems. They have already yielded an efficiency of 35.9% of power conversion. However, this performance still remains below the theoretically limit which is stated to be beyond 43%. Considering monolithic InGaP/Si based tandem designed with double back surface field layers, this work dealt with optimization of efficiency as a function of the structure layers thicknesses and dopings. Numerical simulations were conducted for this purpose by using Silvaco/ATLAS TCAD software and were sorted according to a multi-step optimization procedure. The obtained optimum tandem InGaP/Si solar cell reached an unprecedented power conversion efficiency of 38.16% under 1.5G spectrum. Furthermore, a realistic analysis of performance of this structure was performed under different temperatures and illumination levels. The effect of InGaP band gap variation on efficiency was also investigated.

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Section: Structure Of the Tandem Ingap/si Djscmentioning

confidence: 93%

Design and optimisation of two-terminal InGaP/Si tandem solar cell through numerical simulation

Kharchich,

Khamlichi

2023

Preprint

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Improving the performance of a multi-junction solar cell by optimizing BSF, base and emitter layers

Arzbin

Ghadimi

2019

Materials Science and Engineering: B

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InP QDs modified GaAs/PEDOT:PSS hybrid solar cell with efficiency over 15%

Wang,

Guo,

Liang

et al. 2024

Nano Lett.

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GaAs heterojunction solar cells are known as promising substitutions for traditional GaAs solar cells for their low cost and performance potential. Nevertheless, the further performance enhancement is hindered by insufficient spectral absorption and nonradioactive recombination. In this work, an InP quantum dot (QD) modified GaAs/PEDOT:PSS solar cell is designed to enhance spectrum utilization and suppress the nonradioactive carriers loss and the solar cell efficiency at 15.08% is achieved. Furthermore, InP QDs used in this work are synthesized by a novel hydrothermal method. During the synthesis process, β-cyclodextrin (β-cyc) was introduced into the reactants and acted as a reaction cell, isolating water and oxygen, enabling the reaction to proceed in ambient air. InP QDs synthesized by this method can achieve band engineering by altering reactant ratios, thereby effectively serving as both a Luminescent Solar Concentrator (LSC) and a Front Surface Field (FSF) in GaAs/PEDOT:PSS solar cells. This work demonstrates an inspiring way to synthesize InP QDs and optimize the performance of GaAs hybrid solar cells.

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Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction

Cited by 4 publications

References 15 publications

Design and optimisation of two-terminal InGaP/Si tandem solar cell through numerical simulation

Design and optimisation of two-terminal InGaP/Si tandem solar cell through numerical simulation

Improving the performance of a multi-junction solar cell by optimizing BSF, base and emitter layers

InP QDs modified GaAs/PEDOT:PSS hybrid solar cell with efficiency over 15%

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