Opto-Electronic Properties of μc-Si Grown from SiF<sub>4</sub> and H<sub>2</sub> by PECVD

Okada, Yoshihiro; Campbell, I. H.; Fauchet, Philippe M.; Wagner, S.

doi:10.1557/proc-164-15

MRS Proc.

1989

DOI: 10.1557/proc-164-15

|View full text |Cite

Opto-Electronic Properties of μc-Si Grown from SiF₄ and H₂ by PECVD

Yoshihiro Okada

I. H. Campbell

Philippe M. Fauchet

et al.

Abstract: Microcrystalline Si was grown from SiF 4 and H2 by plasma-enhanced chemical vapor deposition. The films are almost completely crystalline with a crystallite size (determined fromRaman spectra) of about 60 A. The optical absorption and the electrical conductivity of these films were studied. With increasing hydrogen content in the films, the dark conductivity decreases strongly and the activation of the conductivity increases. We explain the conductivity qualitatively in terms of a grain boundary model.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1995

1998

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Substrate-Dependent Growth of Polycrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using SiF₄ and H₂ Gases

Choi

Lee

1995

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The growth of polycrystalline silicon films deposited on two different types of substrates by rf plasma-enhanced chemical vapor deposition using SiF4 and H2 gases was investigated. We observed that on the glass substrates, small grains grew and grain boundaries were not clear at the early stage of deposition (≤100 nm) before the growth of a columnar crystalline layer. However, on the SiO2 substrates, after the growth of a thin amorphous layer (∼10 nm), direct growth of a columnar crystalline layer was observed. Surface roughness of the films increases with the film thickness on both substrates and is larger on glass substrate than on SiO2 substrate. The growth mechanism of the poly-Si films deposited on these two types of substrates was also discussed.

show abstract

Substrate-Dependent Growth of Polycrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using SiF₄ and H₂ Gases

Choi

Lee

1995

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

Variation of Bandgap in Nanocrystalline Silicon as Monitored by Subgap Photoluminescence

et al. 1998

View full text Add to dashboard Cite

Infrared PL from νc-Si and nc-Si thin films is a potential spectroscopic tool for sensitive diagnostics of structure and defects. Bhat et al. have shown that the dominant PL band found in νc-Si centered at 0.9 eV cannot be assigned to the amorphous phase, as the energeticaly similar defect band found in a-Si:H (i.e., at 0.9 eV) shows a different temperature dependence and is much broader (i.e., FWHM of 0.15 eV compared to 0.35 eV) [1]. Recently, Carius et al. have observed a gradual lower energy shift of the 0.9 eV PL down to 0.82 eV for nc-Si as the plasma deposition excitation frequency is increased with a corresponding decrease in FWHM from 0.15 0.12 eV, respectively [2]. However, a lower energy shift in optical absorption was not observed, nor did they look for a correlation with the variation of any other physical property. Here, we report a broader range of energy variation for PL from our ECR-PECVD deposited nc-Si films accompanied with an energy shift in optical absorption and variation in dark conductivity and crystallite size. It has been argued that this PL peak in question could arise from the radiative transitions between bandtail states as in the case of ∼1.3 eV PL in a-Si:H or it may be associated with structural defects [2,3]. Our observations support both possibilities.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Opto-Electronic Properties of μc-Si Grown from SiF₄ and H₂ by PECVD

Cited by 2 publications

References 21 publications

Substrate-Dependent Growth of Polycrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using SiF₄ and H₂ Gases

Substrate-Dependent Growth of Polycrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using SiF₄ and H₂ Gases

Variation of Bandgap in Nanocrystalline Silicon as Monitored by Subgap Photoluminescence

Contact Info

Product

Resources

About

Opto-Electronic Properties of μc-Si Grown from SiF4 and H2 by PECVD

Cited by 2 publications

References 21 publications

Substrate-Dependent Growth of Polycrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using SiF 4 and H 2 Gases

Substrate-Dependent Growth of Polycrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using SiF 4 and H 2 Gases

Variation of Bandgap in Nanocrystalline Silicon as Monitored by Subgap Photoluminescence

Contact Info

Product

Resources

About

Opto-Electronic Properties of μc-Si Grown from SiF₄ and H₂ by PECVD

Substrate-Dependent Growth of Polycrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using SiF₄ and H₂ Gases

Substrate-Dependent Growth of Polycrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using SiF₄ and H₂ Gases