Optoeletronic investigation of Cu2ZnSn(S,Se)4 thin-films & Cu2ZnSn(S,Se)4/CdS interface with scanning probe microscopy

Abstract

The kesterite-structured semiconductor Cu 2 ZnSn(S,Se) 4 (CZTSSe) is prepared by spin coating a non-hydrazine precursor and annealing at Se atmosphere. Local electrical and optoelectronic properties of the CZTSSe thin-film are explored by Kelvin probe force microscopy and conductive atomic force microscopy. Before and after irradiation, no marked potential bending and very low current flow are observed at GBs, suggesting that GBs behave as a charge recombination site and an obstacle for charge transport. Furthermore, CdS nano-islands are synthesized via successive ionic layer adsorption and reaction (SILAR) method on the surface of CZTSSe. By comparing the work function and current flow change of CZTSSe and CdS in dark and under illumination, we demonstrate photo-induced electrons and holes are separated at the interface of p-n junction and transferred in CdS and CZTSSe, respectively.

Optical dispersion characterization of CZTS thin films prepared by sol gel at different annealing temperature

“…The results of the x-ray tests as shown in figure (2), the XRD patterns of CZTS thin films with a broad peak were obtained at the 2 positions 28. The optical transmittance spectra in Vis-NIR region of CZTS thin films annealed at different temperatures is shown in the Figure (3), we can be seen that the transmission curve increases with increasing an annealing temperature but decreases with increasing in photon energy.…”

“…The growing need for clean renewable energy pay about the vast amount of studies in the photovoltaic devices, which are designed and fabricated mainly to harvest all possible photons, and create a useful electrical power output [1], for this results a great attention has been focused on photovoltaic thin film chalcogenides due to high energy conversion efficiency [2]. In the beginning a solar cell thin films device research focused on a polycrystalline thin films based on cadmium telluride (CdTe), copper indium selenide (CIS), and copper indium gallium selenide (CIGS) have attracted considerable interests in the past few decades.…”

“…The reason for the Eg discrepancies was due to the complex combination of various sample preparation methods, Eg measuring means and the existence of secondary phases in the films [7]. Several methods have been used for growth CZTS ptype absorber layer, including; sol-gel spin-coated deposition [2,3,6,8,9], sol-gel dip-coating deposition [10], electro-deposition (co-electroplating) [4,5], thermal evaporation [11], magnetron sputtering, coevaporation, hybrid sputtering, pulsed laser deposition, electron-beam evaporation, screen printing, spray pyrolysis and chemical vapor deposition [4]. Sol-Gel method is a low-cost, simple method based on hydrolysis and poly condensation reactions, often carried out by spin coating or dip coating method.…”

Properties Study of SILAR Deposited Cobalt Selenide Thin Films

“…Several deposition techniques were used to produce thin films including SILAR method, Solvo thermal technique [13], pulsed laser deposition [14], vacuum evaporation [15], electron beam evaporation, molecular beam epitaxy, radio frequency sputtering [16], atomic layer deposition [17], chemical vapour deposition, chemical bath deposition [18][19][20], electro deposition [21][22][23] and spray pyrolysis. Physical properties of the deposited films have been characterized by X-ray diffractometry, Fourier transform infrared spectroscopy [24], reflection high-energy electron diffraction [25], Field emission scanning electron microscopy [26], Atomic force microscopy A(FM), Raman spectroscopy [27], Transmission electron microscopy [TEM], Scanning probe microscopy [28], X-ray photoelectron spectroscopy [29], Energy Dispersive X-Ray Analysis and spectroscopic ellipsometry [30].…”

A Mono‐Boron Complex‐Based Fluorescent Nanofilm with Enhanced Sensing Performance for Methylamine in Vapor Phase

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To develop new sensing films, there are a number of issues that need to be considered, which include, for example, 1) sensing unit (fluorophore) selection as it determines the effectiveness of sensing to the concerned analytes, 2) substrate selection since it could largely affect the sensing performances owing to screening or enriching the analytes from the medium, the so called substrate effect, [5][6][7] and 3) adlayer structure, another crucial but less concerned factor because it highly influences the sensitivity, selectivity, speed, and reversibility (3S + 1R) of a sensing process due to mass transferrelated reasons. [8] In fact, numerous fluorescent films have been developed by different fabrication methods, such as dropcasting [9] and spin-coating [10,11] , which are highly efficient but suffer from coffee-ring effect, [12][13][14] uncontrollable thickness and adlayer structures, etc. Langmuir-Blodgett and mono-layer self-assembled chemical techniques are another two kinds of popular ways to fabricate the sensing films.

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