Order-disorder related band gap changes in Cu2ZnSn(S,Se)4: Impact on solar cell performance

Krämmer, Christoph; Huber, Christian; Schnabel, Thomas; Zimmermann, Christian; Lang, Mario; Ahlswede, Erik; Kalt, H.; Hetterich, M.

doi:10.1109/pvsc.2015.7356096

Cited by 14 publications

(12 citation statements)

References 14 publications

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“…Along the same lines, electro-refl ectance [ 92 ] or quantum efficiency analysis [ 88 ] have been employed to observe the very same reversible E g modifi cation upon thermal treatment.…”

Section: Optical Bandgap Changesmentioning

confidence: 99%

Is the Cu/Zn Disorder the Main Culprit for the Voltage Deficit in Kesterite Solar Cells?

Bourdais¹,

Choné²,

Delatouche³

et al. 2016

Advanced Energy Materials

313

239

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“…Along the same lines, electro-refl ectance [ 92 ] or quantum efficiency analysis [ 88 ] have been employed to observe the very same reversible E g modifi cation upon thermal treatment.…”

Section: Optical Bandgap Changesmentioning

confidence: 99%

Is the Cu/Zn Disorder the Main Culprit for the Voltage Deficit in Kesterite Solar Cells?

Bourdais¹,

Choné²,

Delatouche³

et al. 2016

Advanced Energy Materials

313

239

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show abstract

“…6,11 The phenomenon has been studied in detail for CZTS, 6,11,12 CZTSe, 13 and CZTSSe alloys. 14 The cooling rate is important when comparing CZTS materials since the degree of relative disorder is determined during the cooling stage. 12 Since the ordering process is assisted by the presence of vacancies, the final ordering in the CZTS material is sensitive to the type of defect complexes in the material, i.e., to the type of off-stoichiometry of the CZTS phase.…”

Section: Introductionmentioning

confidence: 99%

Band Tails and Cu–Zn Disorder in Cu₂ZnSnS₄ Solar Cells

Larsen

Scragg

Ross

et al. 2020

ACS Appl. Energy Mater.

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Cu 2 ZnSnS 4 (CZTS) has attracted interest for applications in thin-film solar cells. In this study, the annealing process for CZTS fabrication is systematically varied, resulting in a large variation of materials properties. These variations are connected to the sulfur partial pressure during the annealing. A well-known phenomenon in CZTS is the presence of a high density of Cu−Zn antisite defect pairs, also known as Cu−Zn disorder. Faster Cu−Zn ordering occurs in samples with a similar starting composition annealed in an atmosphere with a higher sulfur partial pressure. This is explained by a higher density of vacancies in these samples. The results indicate that reduction of the vacancy concentration in CZTS annealed in insufficient sulfur partial pressure reduces diffusion, which results in more defective material with a higher density of tail states and poorer device performance.

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“…Materials analysis (neutron diffraction, Raman spectroscopy, photoluminescence measurements, scanning tunneling microscopy, etc.) has revealed that the CZTSSe bulk contains a large density (> 10 20 cm -3 ) of Cu-Zn antisite pairs, resulting in almost complete disorder on the Cu-Zn atomic plane in the material [9][10][11][12][13][14][15][16][17][18]. Efforts have been made to eliminate these bulk defects but these have been met with limited success.…”

Section: Introductionmentioning

confidence: 99%

Compositional effects in Ag2ZnSnSe4 thin films and photovoltaic devices

et al. 2017

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Ag 2 ZnSnSe 4 (AZTSe) is a relatively new n-type photovoltaic (PV) absorber material which has recently demonstrated a conversion efficiency of ~ 5% in a Schottky device architecture. To date, little is known about how the influence of composition on AZTSe material properties and the resulting PV performance. In this study, the Ag/Sn ratio is shown to be critical in the controlling grain growth, non-radiative recombination, and the bulk defect structure of the absorber. Insufficient Ag (relative to Zn and Sn) results in small grains, low photoluminescence intensities, and band gap narrowing, possibly due to an increase in the bulk defect density. Additionally, etching the AZTSe films in KCN prior to junction formation is found to be important for achieving reproducible efficiencies. Surface analysis using Auger Nanoprobe Microscopy analysis reveals that a KCN etch can selectively remove potentially harmful Ag

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Order-disorder related band gap changes in Cu2ZnSn(S,Se)4: Impact on solar cell performance

Cited by 14 publications

References 14 publications

Is the Cu/Zn Disorder the Main Culprit for the Voltage Deficit in Kesterite Solar Cells?

Is the Cu/Zn Disorder the Main Culprit for the Voltage Deficit in Kesterite Solar Cells?

Band Tails and Cu–Zn Disorder in Cu₂ZnSnS₄ Solar Cells

Compositional effects in Ag2ZnSnSe4 thin films and photovoltaic devices

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Order-disorder related band gap changes in Cu2ZnSn(S,Se)4: Impact on solar cell performance

Cited by 14 publications

References 14 publications

Is the Cu/Zn Disorder the Main Culprit for the Voltage Deficit in Kesterite Solar Cells?

Is the Cu/Zn Disorder the Main Culprit for the Voltage Deficit in Kesterite Solar Cells?

Band Tails and Cu–Zn Disorder in Cu2ZnSnS4 Solar Cells

Compositional effects in Ag2ZnSnSe4 thin films and photovoltaic devices

Contact Info

Product

Resources

About

Band Tails and Cu–Zn Disorder in Cu₂ZnSnS₄ Solar Cells