Ordered nanostructures written directly by laser interference

Tan, Chunlei; Peng, Changsi; Pakarinen, Janne; Pessa, M.; Petryakov, V N; Verevkin, Yu K; Zhang, J; Wang, Zuobin; Olaizola, Santiago M.; Berthou, Thierry; Tisserand, Stéphane

doi:10.1088/0957-4484/20/12/125303

Cited by 27 publications

(16 citation statements)

References 13 publications

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“…The intensities of interference is expressed as To study the interaction between the effective intensity distribution and the threshold of the material, the simulation of direct four-beam laser interference exposure is performed to obtain the interference patterns. [21][22][23][24] In the simulation, the interference patterns with different effective intensity distribution shapes are obtained, as shown in Fig. 2.…”

Section: Direct Four-beam Interferencementioning

confidence: 99%

Effective intensity distributions used for direct laser interference exposure

Wang

Zhang

et al. 2015

RSC Adv.

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This paper presents a method to obtain the periodic structures with different feature shapes in direct laser interference lithography. In the method, the desired structures are produced by controlling the effective intensity distributions of interference patterns during the exposure process. The effective intensity distributions are adjusted by changing the exposure beam intensity based on the material modification thresholds. In the simulations and experiments, the different exposure intensities were used to study the interactions between effective intensity distributions and materials, and the direct four-and six-beam laser interference lithography systems were set up to pattern silicon wafers. The shapes and sizes of the fabricated surface structures were changed with the effective intensities. The experimental results are in accordance with the theoretical models and simulations.

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Section: Direct Four-beam Interferencementioning

confidence: 99%

Effective intensity distributions used for direct laser interference exposure

Wang

Zhang

et al. 2015

RSC Adv.

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“…Among them, four-beam laser interference lithography is the most extensively investigated technology. 16,[25][26][27][28][29][30][31][32][33][34] Theoretically, four-beam laser interference could generate evenly distributed periodic structure patterns, but in practice, noticeable modulations were almost unavoidably introduced in interference patterns due to the misalignment of incident angles or unequal incident angles, 25,31-33 which is not desired for many applications.…”

Section: Effects Of Polarization On Four-beam Laser Interference Lithmentioning

confidence: 99%

“…[32][33][34] However, little work has been carried out to study in detail the effect of polarization on the formation of interference patterns and surface structures in four-beam laser interference lithography.…”

Section: Effects Of Polarization On Four-beam Laser Interference Lithmentioning

confidence: 99%

Effects of polarization on four-beam laser interference lithography

Wang¹,

Wang²,

Zhang³

et al. 2013

Applied Physics Letters

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This paper demonstrates that polarization plays an important role in the formation of interference patterns, pattern contrasts, and periods in four-beam interference lithography. Three different polarization modes are presented to study the effects of polarization on four-beam laser interference based on theoretical analysis, simulations, and experiments. A four-beam laser interference system was set up to modify the silicon surface. It was found that the secondary periodicity or modulation was the result of the misaligned or unequal incident angles only in the case of the TE-TE-TM-TM mode. The resulting patterns have shown a good correspondence with the theoretical analysis and simulations.

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“…anostructure fabrication methods such terference technique [8,9] have been application because of their extremely effective approach, which has been ctical or industrial application. Recently, reactive ly investigated to overcome the techniques.…”

Section: Introductionmentioning

confidence: 99%

Silicon nano-fabrication by using silica nanosphere lithography technique for enhanced light management

Choi

Honsberg

2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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We present a complete silicon (Si) nano fabrication process to provide controlled shape nanostructures over large-scale Si surface area by combining our novel solvent controlled silica nanosphere (SNS) method with reactive ion etching. Our novel spin shows that the introduction of N,N-dimethyl-formamide solvent for SNS spin-coating can greatly enhance the uniformity of spin coated 2-dimensional SNS layer and its coverag significantly less sensitivity to deposition area. quality and coverage of SNS provided excellent nano for diverse etching applications. With our SNS lithography, reactive ion etching (RIE) has been applied with fluorine (F) and chlorine (Cl) based gases to provide (1) controlled etching selectivity between SNS (SiO 2 ) and Si substrate and (2) desired etching orientation depending on target shape of structure we focus on the fabrication of Si nanopillar various top diameters but fixed height which show improved anti-reflection effect. In addition, optical modeling with rigorous coupled wave analysis shows that well-tapered nanocone structures can provide greatly reduced incident light angle dependence for surface reflection.Index Terms -Nano-fabriation, silicon, reactive ion etching, silica nanosphere, rigorous coupled wave analysis, surface reflection, incident angle.

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Ordered nanostructures written directly by laser interference

Cited by 27 publications

References 13 publications

Effective intensity distributions used for direct laser interference exposure

Effective intensity distributions used for direct laser interference exposure

Effects of polarization on four-beam laser interference lithography

Silicon nano-fabrication by using silica nanosphere lithography technique for enhanced light management

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