Ordering-induced electron accumulation at GaInP/GaAs hetero-interfaces

Observations on substrate characterisation through Coplanar Transmission Line Impedance measurements

“…It was also found experimentally that etching away sufficient InGaP on chips with already deposited CPW lines would return the line impedances to their 50 Q design values. The absence of temperature dependence indicates that the cause is not trapping behaviour and is consistent with the mechanism described by Tanaka [8] where an electron accumulation at the interfaces between InGaP and GaAs is attributed to macroscopic polarisation of ordered InGaP causing positive and negative charges to occur at both edges of the InGaP layer. …”

Order-Parameter Dependence of Spontaneous Electron Accumulation at Ga0.5In0.5P/GaAs Studied by Raman-Scattering and Photoluminescence Measurements

“…[1,2] Nevertheless, the Raman-scattering results in this study does not show such increase. [1,2] Nevertheless, the Raman-scattering results in this study does not show such increase.…”

“…The ∆E c , F, and n 2D were obtained from a first principal calculation, [5] the Franz-Keldysh oscillation observed in PL-excitation measurements, [4] and the C-V results, [1,2] respectively. Based on the Poisson's law, electron wavefunction and potential energy in each finite element were self-consistently calculated as a function of η.…”

“…[1][2][3] Macroscopic polarization, which is originated from the piezoelectric effect and microscopic spontaneous polarization, is induced in the ordered Ga 0.5 In 0.5 P. [1] As a consequence, a triangular potential is formed at the ordered Ga 0.5 In 0.5 P on GaAs heterointerface, which confines electrons as two-dimensional electron gas (2DEG). To look out for the HBT action, especially, the electronic band structure of this heterointerface must be understood in detail.…”

Magnetophotoluminescence study of theGa0.5In0.5P/GYamashita1, Matsuura2, Wada3 et al. 2002Phys. Rev. B5250View full textAdd to dashboardCite

“…8 -12͒ causes charge accumulation. In this ordering, monolayers of GaP-rich and InP-rich atomic planes alternatively appear along ͓1 11͔ or ͓11 1͔, which can be expressed by using order parameter as Ga 0.5ϩ/2 In 0.5Ϫ/2 P/Ga 0.5Ϫ/2 In 0.5ϩ/2 P. 8,10,11 Therefore, macroscopic polarization, which is originated from the piezoelectric effect [13][14][15] and microscopic spontaneous polarization, 5 is induced in the ordered Ga 0.5 In 0.5 P. In a GaAs/Ga 0.5 In 0.5 P/GaAs double heterostructure, 2,4,5 this macroscopic polarization causes negative and positive sheet charges at both the edges of Ga 0.5 In 0.5 P layer of the GaAs/Ga 0.5 In 0.5 P and Ga 0.5 In 0.5 P/GaAs interfaces, respectively. In the Ga 0.5 In 0.5 P/GaAs single heterostructure, it has been reported that electron accumulation occurs in the GaAs side.…”