Defect engineering
on metal oxide semiconductors is considered
as a versatile approach to regulate their properties. The traditional
method for preparation of defective metal oxide semiconductors always
requires harsh reaction conditions such as high temperature, high
pressure, and explosive chemicals. Here we report an environmentally
friendly mechanochemical synthesis way for preparation of several
defective metal oxide semiconductors (MoO3, TiO2, and ZnO) in 10 g quantities by grinding semiconductor powders with
ascorbic acid. The resulting vacancy-rich TiO2 and ZnO
show a strong visible-light absorption. Meanwhile, the obtained hydrogen-doped
MoO3 (H0.5MoO3) exhibits an exceptional
localized surface plasmon resonance (LSPR), which follows Prout-Tompkins
B1 solid-state reaction model. In addition, the plasmonic H0.5MoO3 is further utilized for colorimetric detection of
H2O2. This colorimetric assay is able to determine
concentrations of H2O2 from 0.05 to 3 mM with
a detection limit of 30 μM. It can distinguish the presence
of 3 mM H2O2 by the naked eye.